Comment on ‘‘Raman scattering with nanosecond resolution during pulsed laser annealing of silicon’’ [Appl. Phys. Lett.41, 700 (1982)]

1983 ◽  
Vol 43 (6) ◽  
pp. 613-613 ◽  
Author(s):  
D. von der Linde ◽  
G. Wartmann ◽  
A. Compaan
Keyword(s):  
Raman Scattering ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Compaan ◽  
S. C. Abbi ◽  
H. D. Yao ◽  
A. Bhat ◽  
F. Hashmi
Keyword(s):  
Silicon Nitride ◽  
Laser Pulse ◽  
Raman Scattering ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Dye Laser ◽  
Pulsed Laser Annealing ◽  
Wide Range ◽  
Xecl Excimer Laser

AbstractCarrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2 × 1014/cm2 @ 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ = 728 nm) or a XeCl excimer laser (λ = 308 nm). Carrier concentrations were measured by plasmon Raman scattering over a wide range of anneal energy densities. Compared with capless laser annealing, much higher carrier activations were achieved when the annealing laser pulse was incident through a Si3N4 cap.

Stress Effects on Raman Measurements of Pulsed Laser Annealed Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
G. E. Jellison ◽  
R. F. Wood
Keyword(s):  
Raman Scattering ◽  
Laser Irradiation ◽  
Laser Annealing ◽  
Phonon Frequency ◽  
Pulsed Laser ◽  
Front Surface ◽  
Surface Region ◽  
Pulsed Laser Annealing ◽  
Anti Stokes ◽  
Pulsed Laser Irradiation

ABSTRACTIt has recently been shown that the front surface region of the silicon lattice is severely strained during pulsed laser irradiation. This uniaxial strain reduces the symmetry of the front surface region, resulting in additional shifts and splittings of the phonon frequency and changes in the Raman scattering tensor. It is shown that, for the case of pulsed laser irradiation, the phonon frequency is increased, and the 3-fold degenerate optical phonon is split into a singlet and a doublet. The changes in the Raman scattering tensor make it non-symmetric, and generally invalidate the technique used by Compaan et al. to determine the cross section experimentally. The complications introduced by the presence of stress during pulsed laser annealing, coupled with the temperature dependence of the optical and Raman tensors, make a simple interpretation of the Stokes to anti-Stokes ratio in terms of lattice temperature extremely unreliable.

Melting model and Raman scattering during pulsed laser annealing of ion‐implanted silicon

1982 ◽  
Vol 41 (3) ◽  
pp. 287-290 ◽  
Author(s):  
R. F. Wood ◽  
D. H. Lowndes ◽  
G. E. Jellison ◽  
F. A. Modine
Keyword(s):  
Raman Scattering ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal

2001 ◽  
Vol 328 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
D. Klinger ◽  
M. Lefeld-Sosnowska ◽  
J. Auleytner ◽  
D. Żymierska ◽  
L. Nowicki ◽  
...  
Keyword(s):  
Defect Structure ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Extended Defect ◽  
Pulsed Laser Annealing
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