Acoustic and optical‐phonon‐limited mobilities in  p‐type silicon within the deformation‐potential theory

1983 ◽  
Vol 43 (5) ◽  
pp. 485-487 ◽  
Author(s):  
Frank Szmulowicz
Keyword(s):  
Potential Theory ◽  
Optical Phonon ◽  
Deformation Potential ◽  
Type Silicon ◽  
P Type ◽  
Deformation Potential Theory

Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 283-288 ◽  
Author(s):  
Maxim Trushin ◽  
O.F. Vyvenko ◽  
Teimuraz Mchedlidze ◽  
Oleg Kononchuk ◽  
Martin Kittler
Keyword(s):  
Oxygen Concentration ◽  
Dislocation Structure ◽  
Electronic States ◽  
Silicon Wafers ◽  
Experimental Investigations ◽  
Deformation Potential ◽  
Screw Dislocations ◽  
Type Silicon ◽  
Frenkel Effect ◽  
P Type

The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.

scholarly journals High-throughput prediction of the carrier relaxation time via data-driven descriptor

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Zizhen Zhou ◽  
Guohua Cao ◽  
Jianghui Liu ◽  
Huijun Liu
Keyword(s):  
Relaxation Time ◽  
Potential Theory ◽  
Three Dimensional ◽  
Training Data ◽  
Data Driven ◽  
Deformation Potential ◽  
Carrier Relaxation ◽  
Electron Phonon Coupling ◽  
Simple Deformation ◽  
Deformation Potential Theory

Abstract It has been demonstrated that many promising thermoelectric materials, such as tetradymite compounds are also three-dimensional topological insulators. In both cases, a fundamental question is the evaluation of carrier relaxation time, which is usually a rough task due to the complicated scattering mechanisms. Previous works using the simple deformation potential theory or considering complete electron-phonon coupling are, however, restricted to small systems. By adopting a data-driven method named SISSO (Sure Independence Screening and Sparsifying Operator) with the training data obtained via deformation potential theory, we propose an efficient and physically interpretable descriptor to evaluate the relaxation time, using tetradymites as prototypical examples. Without any input from first-principles calculations, the descriptor contains only several elemental properties of the constituent atoms, and could be utilized to quickly and reliably predict the carrier relaxation time of a substantial number of tetradymites with arbitrary stoichiometry.

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