1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy

1983 ◽  
Vol 42 (10) ◽  
pp. 845-847 ◽  
Author(s):  
H. Temkin ◽  
K. Alavi ◽  
W. R. Wagner ◽  
T. P. Pearsall ◽  
A. Y. Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiquantum Well

Sequential tunneling in GaAs/AlGaAs multiquantum well structures grown by molecular beam epitaxy

1994 ◽  
Vol 76 (5) ◽  
pp. 2868-2871 ◽  
Author(s):  
Z. Y. Han ◽  
S. F. Yoon ◽  
K. Radhakrishnan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiquantum Well

Pair‐groove‐substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxy

1985 ◽  
Vol 47 (7) ◽  
pp. 728-731 ◽  
Author(s):  
Masaya Mannoh ◽  
Tonao Yuasa ◽  
Shigeya Naritsuka ◽  
Keisuke Shinozaki ◽  
Makoto Ishii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiquantum Well

InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy

1987 ◽  
Vol 61 (5) ◽  
pp. 1713-1719 ◽  
Author(s):  
Hidenao Tanaka ◽  
Yuichi Kawamura ◽  
Shunji Nojima ◽  
Koichi Wakita ◽  
Hajime Asahi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Double Heterostructure ◽  
Multiquantum Well
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