In0.53Ga0.47Asn‐channel native oxide inversion mode field‐effect transistor

1982 ◽  
Vol 41 (3) ◽  
pp. 280-282 ◽  
Author(s):  
A. S. H. Liao ◽  
B. Tell ◽  
R. F. Leheny ◽  
T. Y. Chang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Native Oxide ◽  
Inversion Mode ◽  
Mode Field ◽  
Effect Transistor

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor

Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs

2008 ◽  
Vol 1068 ◽  
Author(s):  
Jesse S. Jur ◽  
Ginger D. Wheeler ◽  
Matthew T. Veety ◽  
Daniel J. Lichtenwalner ◽  
Douglas W. Barlage ◽  
...  
Keyword(s):  
Rare Earth ◽  
Epitaxial Growth ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Rare Earth Oxides ◽  
Oxide Semiconductor ◽  
Native Oxide ◽  
Enhancement Mode ◽  
Effect Transistor ◽  
The Rare Earth

ABSTRACTHigh-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSFET devices (ns > 4×1013 cm−2) offer significant performance advantages, such as greater efficiency and scalability, as compared to heterojunction field effect transistor (HFET) devices for use in high power and high frequency GaN-based devices. High leakage current and current collapse at high drive conditions suggests that the use of a high-κ insulating layer is principle for enhancement-mode MOSFET development. In this work, rare earth oxides (Sc, La, etc.) are explored due to their ideal combination of permittivity and high band gap energy. However, a substantial lattice mismatch (9-21%) between the rare earth oxides and the GaN substrate results in mid-gap defect state densities and growth dislocations. The epitaxial growth of the rare earth oxides by molecular beam epitaxy (MBE) on native oxide passivated-GaN is examined in an effort to minimize these growth related defects and other growth-related limitations. Growth of the oxide on GaN is characterized analytically by RHEED, XRD, and XPS. Preliminary MOS electrical analysis of a 50 Å La2O3 on GaN shows superior leakage performance as compared to significantly thicker Si3N4 dielectric.

scholarly journals Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

2015 ◽  
Vol 106 (7) ◽  
pp. 073506 ◽  
Author(s):  
Jingyun Zhang ◽  
Xiabing Lou ◽  
Mengwei Si ◽  
Heng Wu ◽  
Jiayi Shao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Mode ◽  
Effect Transistor
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