Continuous wave high‐power, high‐temperature semiconductor laser phase‐locked arrays

1982 ◽  
Vol 41 (11) ◽  
pp. 1030-1032 ◽  
Author(s):  
D. R. Scifres ◽  
R. D. Burnham ◽  
W. Streifer
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Continuous Wave

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor

Cavity-length effects of high-temperature high-power continuous-wave characteristics in quantum-cascade lasers

2003 ◽  
Vol 83 (25) ◽  
pp. 5136-5138 ◽  
Author(s):  
J. S. Yu ◽  
A. Evans ◽  
J. David ◽  
L. Doris ◽  
S. Slivken ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Cavity Length ◽  
Continuous Wave ◽  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
Wave Characteristics ◽  
Cascade Lasers ◽  
Length Effects

High-Power High-Temperature Continuous-Wave Operation of Quantum Cascade Laser at λ∼4.6 μm without Lateral Regrowth

2012 ◽  
Vol 29 (7) ◽  
pp. 074215 ◽  
Author(s):  
Ping Liang ◽  
Feng-Qi Liu ◽  
Jin-Chuan Zhang ◽  
Li-Jun Wang ◽  
Jun-Qi Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Cascade Laser ◽  
High Power ◽  
Continuous Wave ◽  
Quantum Cascade ◽  
Continuous Wave Operation

scholarly journals Single-frequency high-power continuous-wave oscillation at 1003 nm of an optically pumped semiconductor laser

2006 ◽  
Author(s):  
M. Jacquemet ◽  
M. Domenech ◽  
J. Dion ◽  
M. Strassner ◽  
G. Lucas-Leclin ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Continuous Wave ◽  
Single Frequency ◽  
Optically Pumped ◽  
Wave Oscillation

High power and high temperature continuous-wave operation of distributed Bragg reflector quantum cascade lasers

2014 ◽  
Vol 104 (7) ◽  
pp. 071109 ◽  
Author(s):  
Feng Xie ◽  
Catherine G. Caneau ◽  
Herve P. LeBlanc ◽  
Ming-tsung Ho ◽  
Jie Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Continuous Wave ◽  
Quantum Cascade Lasers ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Quantum Cascade ◽  
Continuous Wave Operation ◽  
Cascade Lasers

scholarly journals High power continuous wave laser heating of graphite in a high temperature range up to 3800 K

2021 ◽  
Vol 129 (4) ◽  
pp. 043102
Author(s):  
L. Gallais ◽  
T. Vidal ◽  
E. Lescoute ◽  
Y. Pontillon ◽  
J. L. Rullier
Keyword(s):  
High Temperature ◽  
High Power ◽  
Laser Heating ◽  
Continuous Wave ◽  
Continuous Wave Laser ◽  
High Temperature Range ◽  
Temperature Range ◽  
Wave Laser

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

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