Mechanism of open‐circuit voltage enhancement in metal‐insulator‐semiconductor GaAs solar cells

1982 ◽  
Vol 40 (1) ◽  
pp. 43-45 ◽  
Author(s):  
A. K. Srivastava ◽  
S. Guha ◽  
B. M. Arora
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Reducing recombination and enhancing open circuit voltage by Strontium-alloying in multiple cation perovskite solar cells

2017 ◽  
Author(s):  
Pietro Caprioglio ◽  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Martin Stolterfhot ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit

Monolithic perovskite silicon tandem solar cells with high-bandgap perovskite absorber exceeding 1.8 V open-circuit voltage

2019 ◽  
Author(s):  
Kristina M. Winkler ◽  
Ines Ketterer ◽  
Alexander J. Bett ◽  
Özde Kabakli ◽  
Martin Bivour ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Tandem Solar Cells

Importance of interfacial crystallinity to reduce open-circuit voltage loss in organic solar cells

2019 ◽  
Vol 115 (15) ◽  
pp. 153301 ◽  
Author(s):  
Seiichiro Izawa ◽  
Naoto Shintaku ◽  
Mitsuru Kikuchi ◽  
Masahiro Hiramoto
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Voltage Loss
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