Direct observation of laser‐induced solid‐phase epitaxial crystallization by time‐resolved optical reflectivity

1980 ◽  
Vol 37 (11) ◽  
pp. 1019-1021 ◽  
Author(s):  
G. L. Olson ◽  
S. A. Kokorowski ◽  
R. A. McFarlane ◽  
L. D. Hess
Keyword(s):  
Direct Observation ◽  
Solid Phase ◽  
Time Resolved ◽  
Epitaxial Crystallization ◽  
Optical Reflectivity

Direct Measurement of Cw Laser-Induced Crystal Growth Dynamics by Time-Resolved Optical Reflectivity

1980 ◽  
Vol 1 ◽  
Author(s):  
G.L. Olson ◽  
S.A. Kokorowski ◽  
J.A. Roth ◽  
L.D. Hess
Keyword(s):  
Crystal Growth ◽  
Solid Phase ◽  
Growth Dynamics ◽  
Time Resolved ◽  
Laser Method ◽  
Optical Reflectivity ◽  
Spatially Resolved ◽  
Use Of Time ◽  
Cw Laser

ABSTRACTWe report the use of time-resolved optical reflectivity to directly monitor the dynamics of cw laser-induced solid phase epitaxy (SPE) of thin films. This in situ measurement technique utilizes optical interference effects between light reflected from the surface of a sample and from an advancing interface to provide continuous temporal and spatial resolution of crystal growth processes. SPE growth rates of ionimplanted films which are five orders of magnitude faster than previously observed can be induced and accurately measured with the laser method. Arsenic enhances the SPE rate, and spatially resolved measurements show that the growth rate for arsenic implanted films varies in accordance with the ionimplantation profile. Results are reported for silicon selfimplanted samples with and without subsequent arsenic ion implantation, and for silicon samples directly implanted with arsenic.

Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers

2000 ◽  
Vol 34 (1) ◽  
pp. 1-5
Author(s):  
O. V. Aleksandrov ◽  
Yu. A. Nikolaev ◽  
N. A. Sobolev
Keyword(s):  
Solid Phase ◽  
Epitaxial Crystallization

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

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