scholarly journals Optical determination of smectic A layer spacing in freely suspended thin films

1980 ◽  
Vol 36 (6) ◽  
pp. 432-434 ◽  
Author(s):  
Charles Rosenblatt ◽  
Nabil M. Amer
Keyword(s):  
Thin Films ◽  
Layer Spacing ◽  
Smectic A ◽  
Optical Determination ◽  
Freely Suspended

Optical determination of the thickness of thin films symmetrically deposited on both sides of the substrates

1997 ◽  
Vol 8 (8) ◽  
pp. 911-916 ◽  
Author(s):  
Wang Chengyun ◽  
Shao Xueguang ◽  
Mao Junjun ◽  
Su Qingde ◽  
Zhao Guiwen
Keyword(s):  
Thin Films ◽  
Optical Determination

A cell for producing xenon-derivative crystals for cryocrystallographic analysis

1998 ◽  
Vol 31 (5) ◽  
pp. 812-814 ◽  
Author(s):  
Kristina Djinovic-Carugo ◽  
Peter Everitt ◽  
Paul A. Tucker
Keyword(s):  
Thin Films ◽  
Perchloric Acid ◽  
Structure Determination ◽  
Soluble Protein ◽  
Pressure Cell ◽  
Replacement Method ◽  
Isomorphous Replacement ◽  
A Cell ◽  
Freely Suspended

A simple pressure cell is described that may be used to bind xenon to protein crystals freely suspended in thin films which may then be flash-cooled, thus immobilizing the bound xenon. As an example, the use of the cell in the structure determination of perchloric-acid-soluble protein, by the multiple isomorphous replacement method, is described.

Optical determination of the oxygen content of YBa2Cu3O6+x thin films by IR reflectance and transmittance measurements

2001 ◽  
Vol 366 (1) ◽  
pp. 63-72 ◽  
Author(s):  
P. Richter ◽  
M. Kreß ◽  
E. Mohler ◽  
H.G. Roskos ◽  
G. Jakob ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Ir Reflectance ◽  
Optical Determination

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Freeze-fracture TEM of the helical smectic A* phase

1992 ◽  
Vol 50 (1) ◽  
pp. 278-279
Author(s):  
K.J. Ihn ◽  
R. Pindak ◽  
J. A. N. Zasadzinski
Keyword(s):  
Liquid Crystal ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Freeze Fracture ◽  
Smectic Phase ◽  
Layer Spacing ◽  
Screw Dislocations ◽  
Smectic A ◽  
Smectic Phases ◽  
Discrete Amount

A new liquid crystal (called the smectic-A* phase) that combines cholesteric twist and smectic layering was a surprise as smectic phases preclude twist distortions. However, the twist grain boundary (TGB) model of Renn and Lubensky predicted a defect-mediated smectic phase that incorporates cholesteric twist by a lattice of screw dislocations. The TGB model for the liquid crystal analog of the Abrikosov phase of superconductors consists of regularly spaced grain boundaries of screw dislocations, parallel to each other within the grain boundary, but rotated by a fixed angle with respect to adjacent grain boundaries. The dislocations divide the layers into blocks which rotate by a discrete amount, Δθ, given by the ratio of the layer spacing, d, to the distance between grain boundaries, lb; Δθ ≈ d/lb (Fig. 1).

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

STEM and ELS Observation of Early Oxide Formation on the Surface of Cr Thin Films

1980 ◽  
Vol 38 ◽  
pp. 412-413
Author(s):  
Fumio Watari ◽  
J. M. Cowley
Keyword(s):  
Thin Films ◽  
Optical System ◽  
Room Temperature ◽  
Oxide Formation ◽  
Initial Nucleation ◽  
Diffraction Patterns ◽  
Relationship Of ◽  
Multiple Twinning ◽  
Moderately High Temperature

STEM coupled with the optical system was used for the investigation of the early oxidation on the surface of Cr. Cr thin films (30 – 1000Å) were prepared by evaporation onto the polished or air-cleaved NaCl substrates at room temperature and 45°C in a vacuum of 10−6 Torr with an evaporation speed 0.3Å/sec. Rather thick specimens (200 – 1000Å) with various preferred orientations were used for the investigation of the oxidation at moderately high temperature (600 − 1100°C). Selected area diffraction patterns in these specimens are usually very much complicated by the existence of the different kinds of oxides and their multiple twinning. The determination of the epitaxial orientation relationship of the oxides formed on the Cr surface was made possible by intensive use of the optical system and microdiffraction techniques. Prior to the formation of the known rhombohedral Cr2O3, a thin spinel oxide, probably analogous to γ -Al203 or γ -Fe203, was formed. Fig. 1a shows the distinct epitaxial growth of the spinel (001) as well as the rhombohedral (125) on the well-oriented Cr(001) surface. In the case of the Cr specimen with the (001) preferred orientation (Fig. 1b), the rings explainable by spinel structure appeared as well as the well defined epitaxial spots of the spinel (001). The microdif fraction from 20A areas (Fig. 2a) clearly shows the same pattern as Fig. Ia with the weaker oxide spots among the more intense Cr spots, indicating that the thickness of the oxide is much less than that of Cr. The rhombohedral Cr2O3 was nucleated preferably at the Cr(011) sites provided by the polycrystalline nature of the present specimens with the relation Cr2O3 (001)//Cr(011), and by further oxidation it grew into full coverage of the rest of the Cr surface with the orientation determined by the initial nucleation.

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