Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laser

1980 ◽  
Vol 36 (2) ◽  
pp. 147-148 ◽  
Author(s):  
A. Ohsawa ◽  
K. Honda ◽  
S. Ohkawa ◽  
R. Ueda
Keyword(s):  
Semiconductor Laser ◽  
Oxygen Concentration ◽  
Ir Absorption ◽  
Concentration Profiles ◽  
Silicon Crystals

scholarly journals Migration of mineral oil in elastomers

2021 ◽  
Author(s):  
Tobias Förster ◽  
Artur Blivernitz
Keyword(s):  
Diffusion Coefficients ◽  
Mineral Oil ◽  
Activation Energies ◽  
Concentration Profiles ◽  
Small Reservoir ◽  
Experimental Procedure ◽  
Mineral Oils ◽  
The Absolute ◽  
Suitable Measure

AbstractThis work describes a newly introduced experimental procedure to quantify the diffusion progress of mineral oils locally resolved in NBR. Diffusion of reference oils IRM 901, IRM 902 and IRM 903 in NBR with various acrylonitrile contents was investigated. Classical sorption experiments were performed as a basic characterization and compared to the newly introduced method. Here, elastomer specimens are only being dipped with the bottom in a relatively small reservoir of mineral oil. This provides a determination of locally resolved concentration profiles of mineral oils, and the calculation of diffusion coefficients. These diffusion coefficients follow the same trends like those determined via sorption experiments. Despite differences in the absolute numbers, activation energies of diffusion can be applied as a suitable measure for the compatibility of elastomers and fluids.

Quantitative determination of carbon concentration profiles by GD-OES for the study of decarburization in low-carbon steels

2015 ◽  
Vol 48 (2) ◽  
pp. 73-81 ◽  
Author(s):  
Henrique Duarte Alvarenga ◽  
Nele Van Steenberge ◽  
Chris Xhoffer ◽  
Patrick Steegstra ◽  
Jilt Sietsma ◽  
...  
Keyword(s):  
Quantitative Determination ◽  
Carbon Concentration ◽  
Carbon Steels ◽  
Concentration Profiles ◽  
Low Carbon ◽  
Low Carbon Steels

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

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