High‐power constricted double‐heterojunction AlGaAs diode lasers for optical recording

1980 ◽  
Vol 36 (1) ◽  
pp. 4-6 ◽  
Author(s):  
D. Botez ◽  
F. W. Spong ◽  
M. Ettenberg
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Optical Recording ◽  
Double Heterojunction

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

2002 ◽  
Vol 12 (04) ◽  
pp. 1025-1038 ◽  
Author(s):  
D. V. DONETSKY ◽  
R. U. MARTINELLI ◽  
G. L. BELENKY
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Current Mode ◽  
Pulsed Current ◽  
Device Performance ◽  
Type I ◽  
Mid Infrared ◽  
Double Heterojunction

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

High power continuous and quasi-continuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers

1997 ◽  
Vol 33 (19) ◽  
pp. 1635 ◽  
Author(s):  
D.Z. Garbuzov ◽  
R.J. Menna ◽  
R.U. Martinelli ◽  
J.H. Abeles ◽  
J.C. Connolly
Keyword(s):  
High Power ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Multiquantum Well

High power diode lasers emitting from 639 nm to 690 nm

2014 ◽  
Author(s):  
L. Bao ◽  
M. Grimshaw ◽  
M. DeVito ◽  
M. Kanskar ◽  
W. Dong ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Power Diode
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