Determination of the valence‐band discontinuity of InP1−xGaxP1−zAsz(x∼0.13,z∼0.29) by quantum‐well luminescence

1979 ◽  
Vol 34 (12) ◽  
pp. 862-864 ◽  
Author(s):  
R. Chin ◽  
N. Holonyak ◽  
S. W. Kirchoefer ◽  
R. M. Kolbas ◽  
E. A. Rezek
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Valence Band Discontinuity

Photoelectric-Yield Studies of c-Si/a-Si:H Interfaces

1995 ◽  
Vol 377 ◽  
Author(s):  
M. Sebastiani ◽  
L. Di Gaspare ◽  
C. Bittencourt ◽  
F. Evangelisti
Keyword(s):  
Valence Band ◽  
Precise Determination ◽  
Spectroscopy Study ◽  
Final State ◽  
A Value ◽  
Valence Band Discontinuity

ABSTRACTWe report the first yield spectroscopy study on well characterized c-Si/a-Si:H heterojunctions grown in situ under UHV conditions. We find that this spectroscopy, when operated in the constant final state mode, allows a direct and precise determination of the valence-band discontinuity at the interface. A value of δEv = 0.44 ± 0.02 eV was found for the discontinuity.

X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity

1986 ◽  
Vol 49 (16) ◽  
pp. 1037-1039 ◽  
Author(s):  
G. J. Gualtieri ◽  
G. P. Schwartz ◽  
R. G. Nuzzo ◽  
W. A. Sunder
Keyword(s):  
Valence Band ◽  
Core Level ◽  
X Ray ◽  
Valence Band Discontinuity

Pressure dependence of the valence-band discontinuity in GaAs/AlAs and GaAs/AlxGa1−xAs quantum-well structures

1989 ◽  
Vol 39 (8) ◽  
pp. 5546-5549 ◽  
Author(s):  
J. D. Lambkin ◽  
A. R. Adams ◽  
D. J. Dunstan ◽  
P. Dawson ◽  
C. T. Foxon
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Pressure Dependence ◽  
Quantum Well Structures ◽  
Valence Band Discontinuity

The pressure dependence of the valence band discontinuity in quantum well structures

1990 ◽  
Vol 3 (1-6) ◽  
pp. 57-59 ◽  
Author(s):  
V. A. Wilkinson ◽  
J. D. Lambkin ◽  
A. D. Prins ◽  
D. J. Dunstan
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Pressure Dependence ◽  
Quantum Well Structures ◽  
Valence Band Discontinuity

Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells

2011 ◽  
Vol 50 (5S2) ◽  
pp. 05FH03 ◽  
Author(s):  
Mutsumi Sugiyama ◽  
Yoshitsuna Murata ◽  
Tsubasa Shimizu ◽  
Kottadi Ramya ◽  
Chinna Venkataiah ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Experimental Determination ◽  
Valence Band ◽  
Sns Thin Films ◽  
Valence Band Discontinuity

Determination of the (100) InAs/GaSb heterojunction valence‐band discontinuity by x‐ray photoemission core level spectroscopy

1987 ◽  
Vol 61 (12) ◽  
pp. 5337-5341 ◽  
Author(s):  
G. J. Gualtieri ◽  
G. P. Schwartz ◽  
R. G. Nuzzo ◽  
R. J. Malik ◽  
J. F. Walker
Keyword(s):  
Valence Band ◽  
Core Level ◽  
X Ray ◽  
Valence Band Discontinuity

Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells

2011 ◽  
Vol 50 (5) ◽  
pp. 05FH03 ◽  
Author(s):  
Mutsumi Sugiyama ◽  
Yoshitsuna Murata ◽  
Tsubasa Shimizu ◽  
Kottadi Ramya ◽  
Chinna Venkataiah ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Experimental Determination ◽  
Valence Band ◽  
Sns Thin Films ◽  
Valence Band Discontinuity
Sign in / Sign up

Export Citation Format

Share Document