Bubble‐collapse and stripe‐chop mechanism in magnetic bubble garnet materials

1977 ◽  
Vol 31 (3) ◽  
pp. 235-237 ◽  
Author(s):  
Timothy J. Gallagher ◽  
Floyd B. Humphrey
Keyword(s):  
Bubble Collapse ◽  
Magnetic Bubble

Microwave Measurement of Magnetic Bubble Collapse and Stripout Field

1976 ◽  
Author(s):  
Millard G. Mier ◽  
Hilmer W. S. Swenson ◽  
P. E. Wigen
Keyword(s):  
Bubble Collapse ◽  
Microwave Measurement ◽  
Magnetic Bubble

Magnetic bubble collapse in the presence of a microwave field

1988 ◽  
Vol 64 (7) ◽  
pp. 3602-3609 ◽  
Author(s):  
J. L. Dong ◽  
J. O. Artman ◽  
S. H. Charap
Keyword(s):  
Microwave Field ◽  
Bubble Collapse ◽  
Magnetic Bubble

Computer Simulation of Dynamic Magnetic Bubble Collapse

1986 ◽  
Vol 25 (Part 1, No. 9) ◽  
pp. 1353-1357 ◽  
Author(s):  
Enji Fujita ◽  
Yasuhide Saegusa ◽  
Susumu Konishi
Keyword(s):  
Computer Simulation ◽  
Bubble Collapse ◽  
Magnetic Bubble

Analysis of the magnetic bubble collapse method

1973 ◽  
Vol 1 (3) ◽  
pp. 167-169 ◽  
Author(s):  
J. W. F. Dorleijn ◽  
W. F. Druyvesteyn
Keyword(s):  
Bubble Collapse ◽  
Magnetic Bubble

Micropatterning of Permalloy Films by Electron Lithography

1976 ◽  
Vol 34 ◽  
pp. 448-449
Author(s):  
J. K. Maurin
Keyword(s):  
Electron Beam ◽  
Subsequent Development ◽  
Electron Optical System ◽  
Microelectronic Device ◽  
Magnetic Bubble ◽  
Control Beam ◽  
Photosensitive Material ◽  
Direct Exposure ◽  
Electron Lithography ◽  
Scanning Electron

Conductor, resistor, and dielectric patterns of microelectronic device are usually defined by exposure of a photosensitive material through a mask onto the device with subsequent development of the photoresist and chemical removal of the undesired materials. Standard optical techniques are limited and electron lithography provides several important advantages, including the ability to expose features as small as 1,000 Å, and direct exposure on the wafer with no intermediate mask. This presentation is intended to report how electron lithography was used to define the permalloy patterns which are used to manipulate domains in magnetic bubble memory devices.The electron optical system used in our experiment as shown in Fig. 1 consisted of a high resolution scanning electron microscope, a computer, and a high precision motorized specimen stage. The computer is appropriately interfaced to address the electron beam, control beam exposure, and move the specimen stage.

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