Off‐resonant infrared laser action in NH3and C2H4without population inversion

1976 ◽  
Vol 29 (11) ◽  
pp. 725-727 ◽  
Author(s):  
T. Y. Chang ◽  
J. D. McGee
Keyword(s):  
Population Inversion ◽  
Laser Action ◽  
Infrared Laser

Infrared laser action on the spatial, velocity, and cluster-size distributions in an SF6 free jet

1984 ◽  
Vol 84 (3) ◽  
pp. 345-358 ◽  
Author(s):  
P. Melinon ◽  
R. Monot ◽  
J.-M. Zellweger ◽  
H. van den Bergh
Keyword(s):  
Cluster Size ◽  
Laser Action ◽  
Infrared Laser ◽  
Size Distributions ◽  
Free Jet ◽  
Spatial Velocity

Far-Infrared Laser Action in Optically Pumped CH3OD

1975 ◽  
Vol 14 (11) ◽  
pp. 1861-1862 ◽  
Author(s):  
Shozo Kon ◽  
Tetsu Yano ◽  
Eiji Hagiwara ◽  
Hideo Hirose
Keyword(s):  
Laser Action ◽  
Far Infrared ◽  
Infrared Laser ◽  
Optically Pumped ◽  
Far Infrared Laser

Multivalent Acceptor-Doped Germanium Lasers: a solid-state tunable source from 75 to 300 μm

1997 ◽  
Vol 484 ◽  
Author(s):  
D. R. Chamberlin ◽  
O. D. Dubon ◽  
E. Bründermann ◽  
E. E. Haller ◽  
L. A. Reichertzl ◽  
...  
Keyword(s):  
Electric Fields ◽  
Duty Cycle ◽  
Population Inversion ◽  
Continuous Wave ◽  
Laser Action ◽  
Far Infrared ◽  
Uniaxial Stress ◽  
Power Input ◽  
Infrared Light ◽  
Order Of Magnitude

AbstractWe report on the performance of far-infrared hole inversion lasers made from germanium doped with the multivalent acceptors beryllium and copper. Commonly used hole inversion lasers are made from Czochralski-grown Ga-doped Ge single crystals and show emission from 75 to 125 and 170 to 300 μm. The emission gap between 125 and 170 μm, originating from absorption of the far-infrared light due to internal hole transitions in the neutral Ga acceptor, is absent in the new Be and Cu-doped lasers. We also find a mechanism for inversion depopulation through neutral Ga which hinders lasing at low electric fields. This same mechanism is shown to cause population inversion in the Be-doped laser and allows lasing at lower fields. This reduces the power input into the germanium crystal and has allowed us to increase the duty cycle up to 2.5% which is one order of magnitude higher than the maximum duty cycle reported for Ga-doped Ge lasers. These new lasers may offer an opportunity for achieving continuous-wave operation.In addition we have performed preliminary studies on the effect of uniaxial stress on the lasing in these new materials. We demonstrate that small uniaxial stress increases laser action in Ge:Cu. We propose that this is due to an increased population inversion because under these conditions two separate mechanisms cause heavy holes to enter the light hole band.

Continuous wave infrared laser action, self-frequency doubling, and tunability of Yb3+:MgO:LiNbO3

2000 ◽  
Vol 87 (9) ◽  
pp. 4056-4062 ◽  
Author(s):  
E. Montoya ◽  
J. A. Sanz-Garcı́a ◽  
J. Capmany ◽  
L. E. Bausá ◽  
A. Diening ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Laser Action ◽  
Frequency Doubling ◽  
Infrared Laser

Emission of mid-infrared radiation and intersubband population inversion in near-infrared laser QW structures

2000 ◽  
Vol 7 (1-2) ◽  
pp. 241-244 ◽  
Author(s):  
L.E Vorobjev ◽  
D.A Firsov ◽  
V.A Shalygin ◽  
Zh.I Alferov ◽  
N.N Ledentsov ◽  
...  
Keyword(s):  
Infrared Radiation ◽  
Population Inversion ◽  
Near Infrared ◽  
Infrared Laser ◽  
Mid Infrared

dc-field-coupled autoionizing states for laser action without population inversion

1990 ◽  
Vol 41 (9) ◽  
pp. 4721-4726 ◽  
Author(s):  
G. S. Agarwal ◽  
S. Ravi ◽  
J. Cooper
Keyword(s):  
Population Inversion ◽  
Laser Action ◽  
Autoionizing States
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