MIS‐Schottky theory under conditions of optical carrier generation in solar cells

1976 ◽  
Vol 29 (1) ◽  
pp. 51-53 ◽  
Author(s):  
H. C. Card ◽  
E. S. Yang
2007 ◽  
Vol 90 (13) ◽  
pp. 133502 ◽  
Author(s):  
Chunhong Yin ◽  
Björn Pieper ◽  
Burkhard Stiller ◽  
Thomas Kietzke ◽  
Dieter Neher

2016 ◽  
Vol 120 (26) ◽  
pp. 14356-14364 ◽  
Author(s):  
Valentas Bertasius ◽  
Rosanna Mastria ◽  
Aurora Rizzo ◽  
Giuseppe Gigli ◽  
Carlo Giansante ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2174
Author(s):  
Tongchao Shi ◽  
Zeyu Zhang ◽  
Xia Guo ◽  
Zhengzheng Liu ◽  
Chunwei Wang ◽  
...  

We study the ultrafast photoexcitation dynamics in PBDTTT-C-T (P51, poly(4,8-bis(5-(2-ethylhexyl)-thiophene-2-yl)-benzo[1,2-b:4,5-b′]dithiophene-alt-alkylcarbonyl-thieno[3,4-b]thiophene)) film (~100 nm thickness) and PBDTTT-C-T:PC71BM (P51:PC71BM, phenyl-C71-butyric-acid-methyl ester) nanostructured blend (∼100 nm thickness) with/without DIO(1,8-diiodooctane) additives with sub-10 fs transient absorption (TA). It is revealed that hot-exciton dissociation and vibrational relaxation could occur in P51 with a lifetime of ~160 fs and was hardly affected by DIO. However, the introduction of DIO in P51 brings a longer lifetime of polaron pairs, which could make a contribution to photocarrier generation. In P51:PC71BM nanostructured blends, DIO could promote the Charge Transfer (CT) excitons and free charges generation with a ~5% increasement in ~100 fs. Moreover, the dissociation of CT excitons is faster with DIO, showing a ~5% growth within 1 ps. The promotion of CT excitons and free charge generation by DIO additive is closely related with active layer nanomorphology, accounting for Jsc enhancement. These results reveal the effect of DIO on carrier generation and separation, providing an effective route to improve the efficiency of nanoscale polymer solar cells.


2012 ◽  
Vol 182-183 ◽  
pp. 1023-1027
Author(s):  
Xiang Hua Zhang ◽  
Jian Guo Wang ◽  
Tai Jiao Du ◽  
Feng Liu ◽  
Zhi Hua Chen ◽  
...  

A new method for photoelectric device simulation has been developed in our open source software “A Two-Dimensional General Purpose Semiconductor Simulator (GSS)”. Rigorous distribution of incident light in photoelectric device has been obtained by solving Helmholtz equation using finite element method (FEM) with uniaxial perfectly matched layer (UPML) as absorbing boundary. Optical carrier generation ratio has been calculated according to the conversation of energy law. Optical carrier generation ratio and I-V curve of a photoconductive diode induced by continuous wave laser are presented. Analysis shows that optical carrier generation calculated in GSS is more reasonable and I-V curve calculated in GSS agrees well with Medici’s.


Solar Energy ◽  
2017 ◽  
Vol 158 ◽  
pp. 83-88 ◽  
Author(s):  
Argha Dey ◽  
Poulami Karan ◽  
Abhinanda Sengupta ◽  
Sk. Abdul Moyez ◽  
Poulomi Sarkar ◽  
...  

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