Enhancement of the space-charge limited current of relativistic electron beams

1999 ◽  
Vol 6 (4) ◽  
pp. 1360-1362 ◽  
Author(s):  
Han S. Uhm
Keyword(s):  
Space Charge ◽  
Relativistic Electron ◽  
Electron Beams ◽  
Space Charge Limited Current ◽  
Relativistic Electron Beams ◽  
Limited Current ◽  
Space Charge Limited

Influence of ion density on electron-beam propagation from a gas-filled diode

1999 ◽  
Vol 61 (1) ◽  
pp. 31-41 ◽  
Author(s):  
HAN S. UHM ◽  
E. H. CHOI ◽  
J. J. KO ◽  
H. M. SHIN ◽  
G. S. CHO
Keyword(s):  
Electron Beam ◽  
Theoretical Model ◽  
Ion Channel ◽  
Space Charge ◽  
Relativistic Electron ◽  
Relativistic Electron Beam ◽  
Space Charge Limited Current ◽  
Ion Density ◽  
Limited Current ◽  
Space Charge Limited

Electron-beam propagation from a gas-filled diode is investigated. The beginning portion of the electron beam pulse creates an ion channel not only inside the diode but also in the region beyond the anode. A theoretical model is developed for the space-charge-limited current of a relativistic electron beam propagating through an ion channel. A simple analytical expression for the space-charge-limited current is obtained within the context of a thin-beam approximation, where the conducting-tube radius is much larger than the beam radius. The beam current propagating through an ion channel is measured experimentally for a mildly relativistic electron beam. Whenever the ion density inside the diode is the same as the beam electron density, the diode is short-circuited. The ion-channel density at the short-circuiting time is calculated numerically and is used to estimate the space-charge-limited current. It is shown that the experimental data agree well with the analytical results predicted by the theoretical model.

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

Sign in / Sign up

Export Citation Format

Share Document