Fast decay of plasma return currents due to whistler waves

1994 ◽  
Vol 1 (8) ◽  
pp. 2480-2487 ◽  
Author(s):  
K. Gomberoff ◽  
A. Fruchtman
Keyword(s):  
Fast Decay ◽  
Whistler Waves

Perovskite nanocrystal doped all-inorganic glass for X-ray scintillators

2021 ◽  
Vol 9 (16) ◽  
pp. 5452-5459
Author(s):  
Yinsheng Xu ◽  
Xudong Zhao ◽  
Mengling Xia ◽  
Xianghua Zhang
Keyword(s):  
Inorganic Glass ◽  
Fast Decay ◽  
X Ray ◽  
Excellent Stability

Perovskite nanocrystal doped all-inorganic glass shows good X-ray response and fast decay as well as excellent stability, resulting in good scintillator performance for various X-ray detection scenarios.

scholarly journals ELECTRON INJECTION BY WHISTLER WAVES IN NON-RELATIVISTIC SHOCKS

2011 ◽  
Vol 733 (1) ◽  
pp. 63 ◽  
Author(s):  
Mario A. Riquelme ◽  
Anatoly Spitkovsky
Keyword(s):  
Electron Injection ◽  
Whistler Waves ◽  
Relativistic Shocks

Transient Photoconductivity in GaAs Films Grown by Molecular Beam Epitaxy.

1989 ◽  
Vol 145 ◽  
Author(s):  
A. Werner ◽  
T. D. Moustakas ◽  
M. Kunst
Keyword(s):  
Fast Decay ◽  
Electron Hole ◽  
Effective Electron ◽  
Decay Channels ◽  
Decay Component ◽  
Transient Photoconductivity ◽  
High Impurity ◽  
Gaas Films ◽  
Silicon Doped ◽  
Hole Recombination

AbstractHahn-Meitner-Institut, D-1000 Berlin 39, W. Germany Abstract The transient photoconductivity, in MBE grown silicon doped GaAs films, was studied by a contactless microwave conductivity technique. The dark carrier concentration of the investigated films varies from 4 x 1014 cm-3 to 6 x 1017 cm-3. At least two decay channels can be distinguished. An initial fast decay process (t<20 ns), which is excitation intensity dependent, followed by a slower one. The fast decay is tentativly identified with a direct electron-hole recombination and is more pronounced at high excitation intensities and in low impurity materials. The slower decay component is characterized by effective electron lifetimes ranging from 2 µs for low impurity fims up to 100 µs for high impurity samples. It can be concluded that an increase of the Si-concentration leads to an increase in the concentration of hole traps, which quenches the initial electron-hole recombination and decreases the electron decay rate in the microsecond region.

scholarly journals Fast Decay of CaMKII FRET Sensor Signal in Spines after LTP Induction Is Not Due to Its Dephosphorylation

PLoS ONE ◽  
2015 ◽  
Vol 10 (6) ◽  
pp. e0130457 ◽  
Author(s):  
Nikolai Otmakhov ◽  
Shaurav Regmi ◽  
John E. Lisman
Keyword(s):  
Sensor Signal ◽  
Fast Decay

93Nb Nuclear Spin-Spin Relaxation in the Low-Dimensional Antiferromagnet Fe0.25NbS2

2007 ◽  
Vol 62 (10-11) ◽  
pp. 627-632
Author(s):  
Noriaki Okubo
Keyword(s):  
Temperature Dependence ◽  
Spin Relaxation ◽  
Nuclear Spin ◽  
Low Temperatures ◽  
Fast Decay ◽  
Low Dimensional

93Nb nuclear spin-spin relaxation has been examined in the low-dimensional antiferromagnet Fe0.25NbS2 between 4.2 K and 300 K. The relaxation is characterized by two T2’s. The temperature dependence is discussed together with the origin of the disappearance of the fast decay at low temperatures.

Characteristics of resonant electrons interacting with whistler waves in the nearest dipolarizing magnetotail

2021 ◽  
Author(s):  
A. Yu. Malykhin ◽  
E. E. Grigorenko ◽  
D. R. Shklyar ◽  
E.V. Panov ◽  
O. Le Contel ◽  
...  
Keyword(s):  
Whistler Waves
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