Coulomb scattering between Maxwellian plasma and monoenergetic beam

1986 ◽  
Vol 29 (4) ◽  
pp. 1049
Author(s):  
J. M. Riedler ◽  
G. H. Miley ◽  
M. Heindler
Keyword(s):  
Coulomb Scattering ◽  
Monoenergetic Beam ◽  
Maxwellian Plasma

ELECTRONIC RECOMBINATION IN AN ANISOTROPIC CLASSICAL MAXWELLIAN PLASMA

1988 ◽  
Vol 49 (C7) ◽  
pp. C7-291-C7-296
Author(s):  
J. VOGEL ◽  
C. TOEPFFER
Keyword(s):  
Maxwellian Plasma

Multiple coulomb scattering of 7.3 and 11.7 GeV/c muons on a Cu target

1986 ◽  
Vol 243 (2-3) ◽  
pp. 518-522 ◽  
Author(s):  
S.A. Akimenko ◽  
V.I. Belousov ◽  
A.M. Blik ◽  
G.I. Britvich ◽  
V.N. Kolosov ◽  
...  
Keyword(s):  
Coulomb Scattering ◽  
Multiple Coulomb Scattering

The electron angular distribution at various depths in cascade showers

1968 ◽  
Vol 46 (10) ◽  
pp. S201-S203
Author(s):  
V. V. Guzhavin ◽  
I. P. Ivanenko ◽  
B. E. Samosudov
Keyword(s):  
Angular Distribution ◽  
Analytical Solution ◽  
Elementary Event ◽  
Coulomb Scattering ◽  
Multiple Coulomb Scattering

An analytical solution of the angular problem to the approximation of middle angles which is valid for any angles of particle deviation in an elementary event of Coulomb scattering has been obtained using the approximate operator (Vaskin et al. 1966). The proposed method makes it possible to evaluate the accuracy of the resulting expressions and the contribution from non-multiple and multiple Coulomb scattering.

Characterizing intra-exciton Coulomb scattering in terahertz excitations

2014 ◽  
Vol 105 (20) ◽  
pp. 201109 ◽  
Author(s):  
S. Zybell ◽  
J. Bhattacharyya ◽  
S. Winnerl ◽  
F. Eßer ◽  
M. Helm ◽  
...  
Keyword(s):  
Coulomb Scattering

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

2007 ◽  
Vol 556-557 ◽  
pp. 835-838 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Philip A. Mawby ◽  
James A. Covington ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Mobility Model ◽  
Effect Of Temperature ◽  
Coulomb Scattering ◽  
Interface Traps ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Scattering Effects ◽  
Charge Concentration ◽  
Substrate Doping

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.

Plasmon excitation by coulomb scattering of electrons in 2D systems

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 646-648 ◽  
Author(s):  
R.A. Höpfel ◽  
E. Gornik ◽  
A.C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Coulomb Scattering ◽  
2D Systems ◽  
Plasmon Excitation

Coulomb Scattering in Aluminum without Atomic Excitation for 1-MeV Electrons

1965 ◽  
Vol 138 (1A) ◽  
pp. A12-A14 ◽  
Author(s):  
David H. Rester ◽  
Walter J. Rainwater
Keyword(s):  
Coulomb Scattering ◽  
Atomic Excitation
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