Energy stability of thermocapillary convection in a model of the float‐zone crystal‐growth process. II: Nonaxisymmetric disturbances

1991 ◽  
Vol 3 (12) ◽  
pp. 2841-2846 ◽  
Author(s):  
G. P. Neitzel ◽  
C. C. Law ◽  
D. F. Jankowski ◽  
H. D. Mittelmann
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Thermocapillary Convection ◽  
Energy Stability ◽  
Float Zone ◽  
Crystal Growth Process

Energy stability of thermocapillary convection in a model of the float-zone crystal-growth process

1990 ◽  
Vol 217 ◽  
pp. 639-660 ◽  
Author(s):  
Y. Shen ◽  
G. P. Neitzel ◽  
D. F. Jankowski ◽  
H. D. Mittelmann
Keyword(s):  
Finite Length ◽  
Marangoni Number ◽  
Growth Process ◽  
Thermocapillary Convection ◽  
Energy Stability ◽  
Stability Criteria ◽  
Lagrange Equations ◽  
Float Zone ◽  
Crystal Growth Process ◽  
Axisymmetric Disturbances

Energy stability theory has been applied to a basic state of thermocapillary convection occurring in a cylindrical half-zone of finite length to determine conditions under which the flow will be stable. Because of the finite length of the zone, the basic state must be determined numerically. Instead of obtaining stability criteria by solving the related Euler–Lagrange equations, the variational problem is attacked directly by discretization of the integrals in the energy identity using finite differences. Results of the analysis are values of the Marangoni number, MaE, below which axisymmetric disturbances to the basic state will decay, for various values of the other parameters governing the problem.

Instability of thermocapillary–buoyancy convection in shallow layers. Part 2. Suppression of hydrothermal waves

1998 ◽  
Vol 359 ◽  
pp. 165-180 ◽  
Author(s):  
S. BENZ ◽  
P. HINTZ ◽  
R. J. RILEY ◽  
G. P. NEITZEL
Keyword(s):  
Free Surface ◽  
Crystal Growth ◽  
Growth Process ◽  
Thermocapillary Convection ◽  
Model System ◽  
Wave Instability ◽  
Float Zone ◽  
Crystal Growth Process ◽  
Hydrothermal Wave ◽  
Buoyancy Convection

Hydrothermal-wave instabilities in thermocapillary convection are known to produce undesirable effects when they occur during the float-zone crystal-growth process, and perhaps in other situations. Suppression of the hydrothermal-wave instability produced in the model system of Part 1 (Riley & Neitzel 1998) is demonstrated through the sensing of free-surface temperature perturbations and the periodic addition of heat at the free surface along lines parallel to the crests of the hydrothermal waves.

Experimental Verification of the Numerical Model for a CaF2 Crystal Growth Process

2002 ◽  
Vol 37 (1) ◽  
pp. 77-82 ◽  
Author(s):  
A. Molchanov ◽  
U. Hilburger ◽  
J. Friedrich ◽  
M. Finkbeiner ◽  
G. Wehrhan ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Numerical Model ◽  
Experimental Verification ◽  
Growth Process ◽  
Caf2 Crystal ◽  
Crystal Growth Process

Purification of organic compounds in high-quality crystal growth process

2000 ◽  
Vol 66 (2-3) ◽  
pp. 303-308 ◽  
Author(s):  
C Salati ◽  
G Mignoni ◽  
M Zha ◽  
L Zanotti ◽  
C Mucchino ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Organic Compounds ◽  
Growth Process ◽  
High Quality ◽  
Crystal Growth Process

Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth process

2002 ◽  
Vol 25 (4) ◽  
pp. 570-576 ◽  
Author(s):  
Andrzej J Nowak ◽  
Ryszard A Białecki ◽  
Adam Fic ◽  
Gabriel Wecel ◽  
Luiz C Wrobel ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Radiative Heat Transfer ◽  
Growth Process ◽  
Radiative Heat ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

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