Low-frequency noise, a practical tool to assess reliability of laser diodes?

2000 ◽  
Author(s):  
X. Y. Chen
Keyword(s):  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Practical Tool

Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1741-1745 ◽  
Author(s):  
P. Del Vecchio ◽  
A. Curutchet ◽  
Y. Deshayes ◽  
M. Bettiati ◽  
F. Laruelle ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Power Laser ◽  
Power Laser

Low frequency noise investigation of 2–3 μm GaSb-based laser diodes

2017 ◽  
Vol 133 ◽  
pp. 70-77 ◽  
Author(s):  
Justinas Glemža ◽  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas
Keyword(s):  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 673 ◽  
Author(s):  
Justinas Glemža ◽  
Vilius Palenskis ◽  
Andrejus Geižutis ◽  
Bronislovas Čechavičius ◽  
Renata Butkutė ◽  
...  
Keyword(s):  
Spectral Density ◽  
Laser Diodes ◽  
Low Frequency ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Type I ◽  
Material System ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Forward Current

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-infrared 1.09 μm wavelength GaAsBi type-I laser diodes using the low-frequency noise spectroscopy in a temperature range of (180–300) K is presented. Different types of voltage fluctuation spectral density dependencies on the forward current far below the lasing threshold have been observed. According to this, investigated samples have been classified into two groups and two equivalent noise circuits with the corresponding voltage noise sources are presented. Calculations on the voltage spectral density of the electrical noise and current-voltage characteristic approximations have been performed and the results are consistent with the experimental data. The analysis showed that one group of LDs is characterized by 1/fα-type electrical fluctuations with one steep electrical bump in the electrical noise dependence on forward current, and the origin of these fluctuations is the surface leakage channel. The LDs of the other group have two bumps in the electrical noise dependence on current where the first bump is determined by overall LD defectiveness and the second bump by Bi-related defects in the active area of LD with characteristic Lorentzian-type fluctuations having the activation energy of (0.16–0.18) eV.

Low‐frequency noise characteristics of channel substrate planar GaAlAs laser diodes

1981 ◽  
Vol 38 (11) ◽  
pp. 848-850 ◽  
Author(s):  
R. O. Miles ◽  
A. Dandridge ◽  
A. B. Tveten ◽  
T. G. Giallorenzi ◽  
H. F. Taylor
Keyword(s):  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics
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