Microscopic mechanism of the effect of composition and topological orders of metal glasses on plastic shear resistance

1997 ◽  
Vol 23 (12) ◽  
pp. 1004-1009 ◽  
Author(s):  
A. S. Bakai ◽  
V. Z. Bengus ◽  
E. D. Tabachnikova ◽  
P. Duhaj
ce/papers ◽  
2021 ◽  
Vol 4 (2-4) ◽  
pp. 995-1005
Author(s):  
Adrien Corman ◽  
Jean‐François Demonceau ◽  
Jean‐Pierre Jaspart

Author(s):  
J. Fang ◽  
H. M. Chan ◽  
M. P. Harmer

It was Niihara et al. who first discovered that the fracture strength of Al2O3 can be increased by incorporating as little as 5 vol.% of nano-size SiC particles (>1000 MPa), and that the strength would be improved further by a simple annealing procedure (>1500 MPa). This discovery has stimulated intense interest on Al2O3/SiC nanocomposites. Recent indentation studies by Fang et al. have shown that residual stress relief was more difficult in the nanocomposite than in pure Al2O3. In the present work, TEM was employed to investigate the microscopic mechanism(s) for the difference in the residual stress recovery in these two materials.Bulk samples of hot-pressed single phase Al2O3, and Al2O3 containing 5 vol.% 0.15 μm SiC particles were simultaneously polished with 15 μm diamond compound. Each sample was cut into two pieces, one of which was subsequently annealed at 1300° for 2 hours in flowing argon. Disks of 3 mm in diameter were cut from bulk samples.


2011 ◽  
Vol 14 (1) ◽  
pp. 180-196
Author(s):  
A M Elshihy ◽  
H A ShehabEldeen ◽  
O Shaalan ◽  
R S Mahmoud

Water ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 1809
Author(s):  
Yongpeng Nie ◽  
Wankui Ni ◽  
Xiangning Li ◽  
Haiman Wang ◽  
Kangze Yuan ◽  
...  

To better understand and analyze the unsaturated stability of loess filling body, it is necessary to study the changes in suction stress before and after the drying-wetting cycles. In this study, the SWCC of compacted loess before and after drying-wetting cycles was tested using the filter paper method. Then, the suction stress was calculated and the microstructure of the loess sample was determined by the SEM and NMR. The results showed that the drying-wetting cycles had an important influence on the SSCC and microstructure of compacted loess. The change in suction stress before and after the drying-wetting cycles can be well explained by the loess microstructure. The drying-wetting cycles did not significantly change the basic trend of the compacted loess’s SSCC, but it increased the porosity and the dominant pore diameter of loess, and reduced the suction stress under the same matric suction. The main significant change in suction stress with matric suction occurred within the range of the dominant soil pores. The larger the dominant pore diameter, the smaller the suction stress under the same matric suction. In addition, this study proposes a new method for calculating suction stress based on the PSD parameters.


Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1243
Author(s):  
Claudio Puglia ◽  
Giorgio De Simoni ◽  
Francesco Giazotto

The possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen–Cooper–Schrieffer metals was recently demonstrated. Despite the extensive experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such an unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results, which provide information regarding a possible thermal origin of the effect: first, we review experiments performed on high-critical-temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools, such as a half-wave rectifier. Second, we discuss the origin of the gating effect by showing gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate employing finite element simulations and compare the results with experimental data. In our view, the presented data provide a strong indication regarding the unlikelihood of the thermal origin of the gating effect.


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