scholarly journals SIMS characterization of amorphous silicon germanium alloys grown by hot-wire deposition

1999 ◽  
Author(s):  
R. C. Reedy ◽  
A. R. Mason ◽  
B. P. Nelson ◽  
Y. Xu
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hot Wire ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

Dependence of the Electronic Properties of Hot-Wire CVD Amorphous Silicon-Germanium Alloys on Oxygen Impurity Levels

2007 ◽  
Vol 989 ◽  
Author(s):  
Shouvik Datta ◽  
J. David Cohen ◽  
Yueqin Xu ◽  
A. H. Mahan ◽  
Howard M. Branz
Keyword(s):  
Amorphous Silicon ◽  
Valence Band ◽  
Silicon Germanium ◽  
Oxygen Impurity ◽  
Hot Wire ◽  
Defect Level ◽  
Related Defect ◽  
Amorphous Silicon Germanium ◽  
Oxygen Impurities ◽  
Silicon Germanium Alloys

AbstractWe report the effects of intentionally introducing up to ∼ 5×1020/cm3 oxygen impurities into hydrogenated amorphous silicon-germanium alloys (of roughly 30at.% Ge) grown by the hot-wire chemical vapor deposition (HWCVD) method. Deep defect densities determined by drive-level capacitance profiling (DLCP) indicated a modest increase with increasing oxygen content (up to a factor of 3 at the highest oxygen level). Transient photocapacitance (TPC) spectra indicated a clear spectral signature for an optical transition between the valence band and an additional defect level which is attributed to oxygen impurities. The oxygen impurity related defect transition has an optical threshold around 1.4eV above the valence band and also results in a negative contribution to the TPC signal. This initially led us to believe that the bandtail for the higher oxygen samples was much narrower than it actually is. Surprisingly, this additional oxygen related defect level appears to have only a very minor effect upon the estimated minority carrier collection fraction. The effects of light-induced degradation upon some of these oxygen contaminated samples were also examined. We infer the existence of a significant thermal barrier to explain the observed spectral signatures of this oxygen impurity defect.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Thermal relaxation of the electric conductivity in amorphous silicon-germanium alloys

1989 ◽  
Vol 40 (9) ◽  
pp. 6424-6427 ◽  
Author(s):  
Jeffrey Zhaohuai Liu ◽  
V. Chu ◽  
D. S. Shen ◽  
D. Slobodin ◽  
S. Wagner
Keyword(s):  
Amorphous Silicon ◽  
Electric Conductivity ◽  
Silicon Germanium ◽  
Thermal Relaxation ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys
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