Cross Sections and Swarm Coefficients for Nitrogen Ions and Neutrals in N2 and Argon Ions and Neutrals in Ar for Energies from 0.1 eV to 10 keV

1991 ◽  
Vol 20 (3) ◽  
pp. 557-573 ◽  
Author(s):  
A. V. Phelps
Keyword(s):  
Cross Sections ◽  
Nitrogen Ions ◽  
Argon Ions

Gaseous and surface reactions involving helium metastable atoms and resonance photons

1957 ◽  
Vol 241 (1225) ◽  
pp. 270-282 ◽  
Keyword(s):  
Cross Sections ◽  
Gold Surface ◽  
Target Atom ◽  
Photon Flux ◽  
Total Cross Sections ◽  
Metastable Helium ◽  
Helium Atoms ◽  
Atom Flux ◽  
Collision Chamber ◽  
Argon Ions

The absolute electron yield ( γ M ) for He (2 3 S ) metastable atoms incident on a gold surface has been measured. The method requires passage of a metastable atom flux through a collision chamber containing argon and thence to the gold surface. From observations on the current of argon ions arising from collisions of the type He (2 3 S ) + A → He + A + + e , together with measurements of the electron emission from the gold surface, γ M may be determined. The total cross-sections for collisions between metastable helium atoms and He, Ne, A and K have been measured and in the asymmetrical cases are observed to rise linearly with increasing atomic number of the target atom. Some collisions involving helium resonance radiation have also been studied. In particular, the photo-electric yield from the gold surface has been determined together with the attenuation of the photon flux in passage through certain noble gases.

Electron-capture cross sections for low-energy highly charged neon and argon ions from molecular and atomic hydrogen

1985 ◽  
Vol 31 (1) ◽  
pp. 72-83 ◽  
Author(s):  
Cüneyt Can ◽  
Tom J. Gray ◽  
S. L. Varghese ◽  
J. M. Hall ◽  
L. N. Tunnell
Keyword(s):  
Electron Capture ◽  
Cross Sections ◽  
Atomic Hydrogen ◽  
Low Energy ◽  
Capture Cross ◽  
Argon Ions ◽  
Capture Cross Sections

Driftgeschwindigkeiten, Diffusionskoeffizienten und Temperaturen von Photoionen in Argon, Stickstoff und Sauerstoff / Drift velocities, diffusion coefficients and temperatures of photo-ions in argon, nitrogen and oxygen

1972 ◽  
Vol 27 (7) ◽  
pp. 1127-1135
Author(s):  
Peter Warneck
Keyword(s):  
Cross Sections ◽  
Ground State ◽  
Diffusion Coefficients ◽  
Drift Chamber ◽  
Drift Region ◽  
Gas Temperature ◽  
Oxygen Ions ◽  
Argon Ions ◽  
High Fields ◽  
And Diffusion

Abstract Groups of ions were produced by photoionisation of argon, nitrogen and oxygen in a drift chamber, using as the light source a repetitive spark discharge in combination with a uv monochromator. After their traversal of the drift region, the ions were detected in a mass spectrometer. An analysis of the temporal arrival profiles provided ionic drift velocities and diffusion coefficients as a function of gas pressure and electric field. For ions in their electronic and vibrational ground states, the measured drift velocities are in accord with previous data in the literature. At some wave lengths excited ions are produced in addition to ground state ions. Their drift velocities are larger on account of smaller charge transfer cross sections. Drift velocities and diffusion coefficients pro-vide ion temperatures as a function of the reduced field strength. Ion temperatures for argon ions correspond to the gas temperature. For nitrogen and oxygen ions the temperatures increase linearly with E/P and extrapolate at high fields to those given by Wannier's theory

Evaporation residue cross sections from reactions with argon ions

1975 ◽  
Vol 58 (2) ◽  
pp. 163-165 ◽  
Author(s):  
H. Gauvin ◽  
D. Guerreau ◽  
Y. Le Beyec ◽  
M. Lefort ◽  
F. Plasil ◽  
...  
Keyword(s):  
Cross Sections ◽  
Evaporation Residue ◽  
Argon Ions

scholarly journals Chemical Activity and Morphology of Nanostructured Plasma-Sprayed Titanium Induced by Nitrogen and Argon Ions

2021 ◽  
Vol 288 ◽  
pp. 01037
Author(s):  
Irina Perinskaya ◽  
Vladimir Perinsky ◽  
Svetlana Kalganova
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Chemical Activity ◽  
Engineering Industry ◽  
Chemical Characteristics ◽  
Third Order ◽  
Titanium Surfaces ◽  
Nitrogen Ions ◽  
Argon Ions ◽  
Plasma Sprayed

The paper focuses on the chemical characteristics of ion-beam passivation effects (of the first-third order) of titanium depending on the dose of implanted ions. The key objective is electron microscopy and SPM-based analysis of nanostructured VT1-00 titanium surfaces produced by entering nitrogen and argon ions of high energy. This type of surfaces can find application in fabrication of devices for the power engineering industry. The obtained experimental data provide evidence of a carbon nanocoating over the surface of titanium implanted with accelerated nitrogen ions, which is similar to that acquired upon titanium implantation with argon ions. A hypothesis is formulated about the existence of a mechanism for changing the chemical activity of titanium as a result of ion-beam nanostructuring – ion-stimulated synthesis of.

Stopping cross sections of 50- to 230-keV nitrogen ions in silicon measured by ion backscattering spectroscopy

2009 ◽  
Vol 54 (6) ◽  
pp. 783-789
Author(s):  
V. V. Afrosimov ◽  
D. V. Denisov ◽  
R. N. Il’in ◽  
V. I. Sakharov ◽  
I. T. Serenkov
Keyword(s):  
Cross Sections ◽  
Nitrogen Ions ◽  
Ion Backscattering

Differential fragmentation cross sections for 7.3 GeV nitrogen ions incident on protons

1979 ◽  
Vol 19 (4) ◽  
pp. 1380-1392 ◽  
Author(s):  
John P. Wefel ◽  
John M. Kidd ◽  
Walter Schimmerling ◽  
Kirby G. Vosburgh
Keyword(s):  
Cross Sections ◽  
Nitrogen Ions

Depth Profiling of Ion Beam Induced Damage in Semiconductor Heterostructures

1988 ◽  
Vol 128 ◽  
Author(s):  
R. Germann ◽  
A. Forchel ◽  
G. Hörcher ◽  
G. Weimann
Keyword(s):  
Quantum Well ◽  
Cross Sections ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Depth Profiling ◽  
Multiple Quantum ◽  
Etching Technique ◽  
Quantum Well Structures ◽  
Inclination Angles ◽  
Argon Ions

ABSTRACTWe have produced beveled cross-sections of GaAs/GaAlAs multiple quantum well structures with inclination angles of 0.55 minutes of arc with a special ion beam etching technique. The extension of the damage which is induced during the dry etching process can be evaluated directly by a comparison of spatially resolved secondary ion mass spectroscopy and photoluminescence measurements. We observe a thickness of the damaged surface layer between 36 nm for 250 eV Argon ions and 160 nm for 1000 eV Argon ions in a GaAs/GaAlAs multiple quantum well structure.

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