Real-time x-ray scattering studies of thin-film growth and processing

1997 ◽  
Author(s):  
R. L. Headrick
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Film Growth ◽  
Thin Film Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Real-time X-ray scattering studies on temperature dependence of perfluoropentacene thin film growth

2013 ◽  
Vol 114 (4) ◽  
pp. 043515 ◽  
Author(s):  
C. Frank ◽  
J. Novák ◽  
A. Gerlach ◽  
G. Ligorio ◽  
K. Broch ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Real Time ◽  
Film Growth ◽  
Thin Film Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Grazing-incidence small-angle X-ray scattering: new tool for studying thin film growth

1989 ◽  
Vol 22 (6) ◽  
pp. 528-532 ◽  
Author(s):  
J. R. Levine ◽  
J. B. Cohen ◽  
Y. W. Chung ◽  
P. Georgopoulos
Keyword(s):  
Thin Film ◽  
Small Angle ◽  
Film Growth ◽  
Grazing Incidence ◽  
Thin Film Growth ◽  
Synchrotron Source ◽  
X Ray ◽  
X Ray Scattering ◽  
Sampling Statistics ◽  
Ray Scattering

Grazing-incidence small-angle X-ray scattering (GISAXS) is introduced as a method of studying discontinuous thin films. In this method, the incident beam is totally externally reflected from the substrate followed by small-angle scattering of the refracted beam by the thin film. The experiment described establishes the ability of GISAXS to provide size information for islands formed in the initial stages of thin film growth. The data presented are for gold films of 7 and 15 Å average thicknesses on Corning 7059 glass substrates. The advantages of this technique are that it is non-destructive, can be done in situ, provides excellent sampling statistics, does not necessarily require a synchrotron source, and is not limited to thin or conducting substrates.

The crossover of preferred orientation in TiN film growth: A real time x-ray scattering study

1997 ◽  
Vol 12 (1) ◽  
pp. 9-12 ◽  
Author(s):  
J. H. Je ◽  
D. Y. Noh ◽  
H. K. Kim ◽  
K. S. Liang
Keyword(s):  
Real Time ◽  
Film Growth ◽  
Substrate Surface ◽  
Rf Sputtering ◽  
Growth Front ◽  
Surface Topology ◽  
Ex Situ ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

The orientational crossover phenomena in a radio-frequency (rf) sputtering growth of TiN films were studied in a real-time synchrotron x-ray scattering experiment. Following the initial random nucleation and growth stage, the growth was dominated by the grains with the (002) planes aligned with the substrate surface. Surprisingly, at later stages, the grains with the (002) growth front tilted away from the surface by about 60° became dominant. The tilting of the growth front resulted in a faceted surface topology that was confirmed by an ex situ AFM study. Our x-ray results suggest that the crossover was driven by the competition between the surface and the strain energy

In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition

2011 ◽  
Vol 11 (2) ◽  
pp. 1577-1580 ◽  
Author(s):  
Yong Jun Park ◽  
Dong Ryeol Lee ◽  
Hyun Hwi Lee ◽  
Han-Bo-Ram Lee ◽  
Hyungjun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Layer Deposition ◽  
Scattering Study
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