Resonances in one‐dimensional Stark effect and continued fractions

1979 ◽  
Vol 20 (4) ◽  
pp. 685-690 ◽  
Author(s):  
S. Graffi ◽  
V. Grecchi ◽  
S. Levoni ◽  
M. Maioli
2002 ◽  
Vol 09 (05n06) ◽  
pp. 1827-1830 ◽  
Author(s):  
G. J. VÁZQUEZ ◽  
C. AVENDAÑO ◽  
J. A. REYES ◽  
M. DEL CASTILLO-MUSSOT ◽  
H. SPECTOR

We calculate the states of a one-dimensional hydrogen atom under the effect of an electric field (Stark effect) in the strong field regime being the field confined in a finite region of width 2a (capacitor region). We find numerically the solution inside the capacitor and match it to an analytical solution outside the capacitor. Although the electric field tends to separate the two opposite charges particles, the total energy of the system decreases with increasing electric field strength. Our results are useful as a guideline to study strong electric field effects in electronic states of impurities or excitons in 1D systems.


1985 ◽  
Vol 53 (8) ◽  
pp. 757-760 ◽  
Author(s):  
Francisco M. Fernández ◽  
Eduardo A. Castro

2017 ◽  
Vol 2017 ◽  
pp. 1-8
Author(s):  
Mahshid Mokhtarnejad ◽  
Morteza Asgari ◽  
Arash Sabatyan

This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE) was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.


1990 ◽  
Vol 6 (1) ◽  
pp. L1-L6 ◽  
Author(s):  
A P Katchalov ◽  
Ya V Kurylev

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