HgIn excimer and bound-bound emission following laser excitation of atomic In in an indium-mercury vapor mixture

1997 ◽  
Author(s):  
P. Bicchi ◽  
C. Marinelli ◽  
R. A. Bernheim
1989 ◽  
Vol 66 (2) ◽  
pp. 475-481 ◽  
Author(s):  
Sara Majetich ◽  
Elisa Mangle Boczar ◽  
John R. Wiesenfeld

1997 ◽  
Author(s):  
N. Finkelstein ◽  
W. Lempert ◽  
R. Miles ◽  
N. Finkelstein ◽  
W. Lempert ◽  
...  

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


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