Effect of hole blocking layer on V-pit hole injection and internal quantum efficiency in GaN-based yellow LED

2020 ◽  
Vol 127 (18) ◽  
pp. 185704
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Hole Injection ◽  
Blocking Layer ◽  
Hole Blocking Layer

scholarly journals Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 334
Author(s):  
Barsha Jain ◽  
Ravi Teja Velpula ◽  
Moulik Patel ◽  
Sharif Md. Sadaf ◽  
Hieu Pham Trung Nguyen
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electron Leakage ◽  
Deep Ultraviolet

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type AlxGa(1−x)N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EBL due to the formation of positive sheet polarization charges at the heterointerface of the last quantum barrier (QB)/EBL. Subsequently, the hole injection efficiency of the LED is severely limited. In this regard, we propose an EBL-free AlGaN deep UV LED structure using graded staircase quantum barriers (GSQBs) instead of conventional QBs without affecting the hole injection efficiency. The reported structure exhibits significantly reduced thermal velocity and mean free path of electrons in the active region, thus greatly confines the electrons over there and tremendously decreases the electron leakage into the p-region. Moreover, such specially designed QBs reduce the quantum-confined Stark effect in the active region, thereby improves the electron and hole wavefunctions overlap. As a result, both the internal quantum efficiency and output power of the GSQB structure are ~2.13 times higher than the conventional structure at 60 mA. Importantly, our proposed structure exhibits only ~20.68% efficiency droop during 0–60 mA injection current, which is significantly lower compared to the regular structure.

Dependence of Internal Quantum Efficiency of GaN-based Yellow LED with Si Substrate on Electron Blocking Layer with Variable Al Composition

2019 ◽  
Vol 40 (9) ◽  
pp. 1102-1107
Author(s):  
胡耀文 HU Yao-wen ◽  
高江东 GAO Jiang-dong ◽  
全知觉 QUAN Zhi-jue ◽  
张建立 ZHANG Jan-li ◽  
潘 拴 PAN Shuan ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Blocking Layer ◽  
Si Substrate ◽  
Electron Blocking Layer

Droop-free internal quantum efficiency of p-InGaN/p-GaN superlattice electron blocking layer

Optik ◽  
2020 ◽  
Vol 223 ◽  
pp. 165514
Author(s):  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Kiran Saba ◽  
Munaza Munsif
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Blocking Layer ◽  
Electron Blocking Layer
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