scholarly journals Improved ambient stability of thermally annealed zinc nitride thin films

AIP Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 035018 ◽  
Author(s):  
A. Trapalis ◽  
I. Farrer ◽  
K. Kennedy ◽  
A. Kean ◽  
J. Sharman ◽  
...  
Keyword(s):  
2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.


2007 ◽  
Vol 515 (24) ◽  
pp. 8573-8576 ◽  
Author(s):  
V. Kambilafka ◽  
P. Voulgaropoulou ◽  
S. Dounis ◽  
E. Iliopoulos ◽  
M. Androulidaki ◽  
...  
Keyword(s):  

2018 ◽  
Vol 232-235 ◽  
pp. 33-40 ◽  
Author(s):  
Karthik Kumar Chinnakutti ◽  
Shyju Thanharaj Salammal ◽  
Vengatesh Panneerselvam ◽  
Kuppusami Parasuraman ◽  
Vinita Vishwakarma ◽  
...  

Author(s):  
Daniel G. Georgiev ◽  
Joseph P. Moening ◽  
Sandeepkumar Naleshwar ◽  
Ahalapitiya H. Jayatissa

2012 ◽  
Vol 520 (6) ◽  
pp. 1698-1704 ◽  
Author(s):  
Nanke Jiang ◽  
Daniel G. Georgiev ◽  
Ting Wen ◽  
Ahalapitiya H. Jayatissa

2008 ◽  
Vol 516 (22) ◽  
pp. 8170-8174 ◽  
Author(s):  
P. Voulgaropoulou ◽  
S. Dounis ◽  
V. Kambilafka ◽  
M. Androulidaki ◽  
M. Ružinský ◽  
...  

Author(s):  
Abdelkader Outzourhit ◽  
Abdelmajid Abouelaoualim ◽  
Rafiq El Amri ◽  
Abdelhadi Essafti ◽  
Ismail Aboudihab ◽  
...  

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