Physics of high-efficiency 240–260 nm deep-ultraviolet lasers and light-emitting diodes on AlGaN substrate

2020 ◽  
Vol 127 (20) ◽  
pp. 205702 ◽  
Author(s):  
Cheng Liu ◽  
Jing Zhang
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Lasers

scholarly journals Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 420 ◽  
Author(s):  
Yung-Min Pai ◽  
Chih-Hao Lin ◽  
Chun-Fu Lee ◽  
Chun-Peng Lin ◽  
Cheng-Huan Chen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Power ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

2004 ◽  
Vol 84 (23) ◽  
pp. 4762-4764 ◽  
Author(s):  
V. Adivarahan ◽  
S. Wu ◽  
J. P. Zhang ◽  
A. Chitnis ◽  
M. Shatalov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

High efficiency AlGaN deep ultraviolet light emitting diodes on silicon

2015 ◽  
Author(s):  
Zetian Mi ◽  
Songrui Zhao ◽  
Ashfiqua Connie ◽  
Mohammad Hadi Tavakoli Dastjerdi
Keyword(s):  
Ultraviolet Light ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Extraction efficiency simulation in deep ultraviolet AlGaN light emitting diodes

2021 ◽  
Author(s):  
Qian Fan ◽  
Xianfeng Ni ◽  
Bing Hua ◽  
Xing Gu
Keyword(s):  
Absorption Coefficient ◽  
Flip Chip ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Wide Band ◽  
Light Extraction Efficiency ◽  
Device Structure ◽  
Light Emitting ◽  
Deep Ultraviolet

Abstract A ray tracing model is developed to study the light extraction efficiency (LEE) of the nitride wide band gap semiconductor deep ultraviolet light emitting diodes (DUV-LEDs). The basic device structure is flip-chip LED device with dome shape encapsulation. Various device parameters such as reflecting metal choices, absorption coefficient of the AlGaN/AlN layers, sapphire surface roughness etc have been examined. We have found that the transparency of the AlGaN/AlN epitaxial layers as well as the encapsulation layer play key roles in improving the LEE and spatial distribution. To further verify the absorption by the AlN, highly doped n-type Al0.61Ga0.39N epitaxial layer is grown on AlN template and sapphire substrate by high temperature MOCVD deposition method, then the transmittance is measured after sapphire’s backside being polished to mirror smooth. The extrapolated the absorption coefficient of the AlN is below 103 cm-1, which paves the way to the success of high efficiency DUV LEDs.

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