Morphological magnetostatic coupling in spin valves due to anisotropic self-affine interface roughness

2020 ◽  
Vol 127 (9) ◽  
pp. 095301 ◽  
Author(s):  
M. J. Kamali Ashtiani ◽  
M. Mokhtarzadeh ◽  
M. Hamdi ◽  
S. M. Mohseni
Keyword(s):  
Interface Roughness ◽  
Spin Valves ◽  
Magnetostatic Coupling

Magnetostatic coupling in spin valves: Revisiting Néel’s formula

2000 ◽  
Vol 87 (9) ◽  
pp. 5759-5761 ◽  
Author(s):  
T. C. Schulthess ◽  
W. H. Butler
Keyword(s):  
Spin Valves ◽  
Magnetostatic Coupling

MAGNETORESISTANCE IN NANO-SCALE NiO-CONTAINING Co/Cu/Co SPIN VALVES

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2574-2579 ◽  
Author(s):  
A. M. ZHANG ◽  
X. S. WU ◽  
L. SUN ◽  
A. HU
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Growth Parameters ◽  
Coupling Effect ◽  
Spin Valve ◽  
Interface Roughness ◽  
Spin Valves ◽  
X Ray ◽  
X Ray Scattering

A series of NiO -containing Co/Cu/Co spin valves with the thickness Co of 5 nm and Cu of 2 nm were fabricated by magnetron sputtering technique with different growth parameters. NiO layer with the thickness of 40 nm is used as a coupling layer. Magnetoresistance (MR) of the spin valve with NiO layer under the bottom of Co/Cu/Co (BSV) is larger than that of the spin valve with NiO layer at the top of Co/Cu/Co (TSV) at room temperature. The MR values can be improved with decreasing the sputtering rate of copper layer. The studies by in-situ grazing incident X-ray scattering on the annealing temperature dependence of MR show that the decrease of the interface roughness between Co and NiO may increase the MR value, while the decrease of the coupling effect between NiO and Co decreases the MR value.

Effects of Layer Deposition Sequence on Microstructure and Magnetostatic Coupling of Spin-Valves with Amorphous CoNbZr Layer

2005 ◽  
Vol 22 (3) ◽  
pp. 690-693 ◽  
Author(s):  
Wen Qi-Ye ◽  
Zhang Huai-Wu ◽  
Jiang Xiang-Dong ◽  
Tang Xiao-Li ◽  
Zhong Zhi-Yong ◽  
...  
Keyword(s):  
Spin Valves ◽  
Layer Deposition ◽  
Magnetostatic Coupling

TEM study of Cosi2 formation via annealing of Co-Ti bilayers on Si

1995 ◽  
Vol 53 ◽  
pp. 464-465
Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier
Keyword(s):  
Thermal Instability ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Contact Layer ◽  
Interface Roughness ◽  
Oxide Semiconductor ◽  
Surface Layers ◽  
Silicide Layer ◽  
Small Lattice ◽  
Buried Layers

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.

Fabrication and characterization - by High Resolution Electron Microscopy and atom probe microanalysis - of Co-based metallic multilayer films

1990 ◽  
Vol 48 (4) ◽  
pp. 772-773
Author(s):  
Amanda K. Petford-Long ◽  
A. Cerezo ◽  
M.G. Hetherington
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atom Probe ◽  
Multilayer Films ◽  
Interface Roughness ◽  
Probe Field ◽  
Resolution Electron ◽  
Potential Applications ◽  
Field Ion Microscope

The fabrication of multilayer films (MLF) with layer thicknesses down to one monolayer has led to the development of materials with unique properties not found in bulk materials. The properties of interest depend critically on the structure and composition of the films, with the interfacial regions between the layers being of particular importance. There are a number of magnetic MLF systems based on Co, several of which have potential applications as perpendicular magnetic (e.g Co/Cr) or magneto-optic (e.g. Co/Pt) recording media. Of particular concern are the effects of parameters such as crystallographic texture and interface roughness, which are determined by the fabrication conditions, on magnetic properties and structure.In this study we have fabricated Co-based MLF by UHV thermal evaporation in the prechamber of an atom probe field-ion microscope (AP). The multilayers were deposited simultaneously onto cobalt field-ion specimens (for AP and position-sensitive atom probe (POSAP) microanalysis without exposure to atmosphere) and onto the flat (001) surface of oxidised silicon wafers (for subsequent study in cross-section using high-resolution electron microscopy (HREM) in a JEOL 4000EX. Deposi-tion was from W filaments loaded with material in the form of wire (Co, Fe, Ni, Pt and Au) or flakes (Cr). The base pressure in the chamber was around 8×10−8 torr during deposition with a typical deposition rate of 0.05 - 0.2nm/s.

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