Trace vapor generator for Explosives and Narcotics (TV-Gen)

2020 ◽  
Vol 91 (8) ◽  
pp. 085112
Author(s):  
Braden C. Giordano ◽  
Lauryn E. DeGreeff ◽  
Michael Malito ◽  
Mark Hammond ◽  
Christopher Katilie ◽  
...  
Keyword(s):  
Vapor Generator

scholarly journals Broadband Meta‐Absorber with Au/Ni Core–Shell Nanowires for Solar Vapor Generator

2021 ◽  
Vol 5 (7) ◽  
pp. 2100185
Author(s):  
Soomin Son ◽  
Jaemin Park ◽  
Sucheol Ju ◽  
Daihong Huh ◽  
Junho Jun ◽  
...  
Keyword(s):  
Core Shell ◽  
Vapor Generator ◽  
Shell Nanowires

A transient explosive vapor generator based on capillary gas chromatography

1991 ◽  
Vol 9 (3) ◽  
pp. 173-189 ◽  
Author(s):  
George A. Reiner ◽  
Cheryl L. Heisey ◽  
Harold M. McNair
Keyword(s):  
Gas Chromatography ◽  
Capillary Gas Chromatography ◽  
Vapor Generator

A miniaturized UV-LED photochemical vapor generator for atomic fluorescence spectrometric determination of trace selenium

2018 ◽  
Vol 33 (7) ◽  
pp. 1217-1223 ◽  
Author(s):  
Zhirong Zou ◽  
Fujian Xu ◽  
Yunfei Tian ◽  
Xiaoming Jiang ◽  
Xiandeng Hou
Keyword(s):  
Vapor Generation ◽  
Atomic Fluorescence ◽  
Uv Led ◽  
Photochemical Vapor Generation ◽  
Vapor Generator

A miniaturized UV-LED photochemical reactor is proposed for selenium photochemical vapor generation (Photo-CVG).

Omnidirectional, Broadband Light Absorption in a Hierarchical Nanoturf Membrane for an Advanced Solar‐Vapor Generator

2020 ◽  
Vol 30 (50) ◽  
pp. 2003862 ◽  
Author(s):  
Jong Uk Kim ◽  
Seung Ji Kang ◽  
Sori Lee ◽  
Jehyung Ok ◽  
Yongjae Kim ◽  
...  
Keyword(s):  
Light Absorption ◽  
Vapor Generator

Black Phosphorous Nanosheets: A Novel Solar Vapor Generator

Solar RRL ◽  
2020 ◽  
Vol 4 (4) ◽  
pp. 1900537 ◽  
Author(s):  
Wei Cai ◽  
Xiaowei Mu ◽  
Ying Pan ◽  
Zhaoxin Li ◽  
Junling Wang ◽  
...  
Keyword(s):  
Vapor Generator ◽  
Black Phosphorous

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation

2014 ◽  
Vol 778-780 ◽  
pp. 975-978 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Youichi Makifuchi ◽  
Tsuyoshi Araoka ◽  
Masaki Miyazato ◽  
Yoshiyuki Sugahara ◽  
...  
Keyword(s):  
Water Vapor ◽  
Partial Pressure ◽  
Oxidation Rate ◽  
Catalytic Action ◽  
Wet Oxidation ◽  
Interface Traps ◽  
Mos Capacitor ◽  
Channel Mobility ◽  
Vapor Generator ◽  
First Time

4H-SiC(000-1) C-face was oxidized in H2O and H2mixture gas (H2rich wet ambient) for the first time. H2rich wet ambient was formed by the catalytic water vapor generator (WVG) system, where the catalytic action instantaneously enhances the reactivity between H2and O2to produce H2O. The dependence of SiC oxidation rate on the H2O partial pressure was investigated. We fabricated 4H-SiC C-face MOS capacitor and MOSFET by the H2rich wet re-oxidation following the dry O2oxidation. The density of interface traps was reduced and the channel mobility was improved in comparison with the conventional O2rich wet oxidation.

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