Reliable inkjet contact metallization on printed polymer semiconductors for fabricating staggered TFTs

2020 ◽  
Vol 116 (15) ◽  
pp. 153301
Author(s):  
Yongwoo Lee ◽  
Jimin Kwon ◽  
Sungyeop Jung ◽  
Woojo Kim ◽  
Sanghoon Baek ◽  
...  
Keyword(s):  
Polymer Semiconductors ◽  
Contact Metallization

Relation Between Local Structure, Electric Dipole and Charge Carrier Dynamics in DHICA Melanin, a Model for Biocompatible Semiconductors

2019 ◽  
Author(s):  
Micaela Matta ◽  
Alessandro Pezzella ◽  
Alessandro Troisi
Keyword(s):  
Electronic Structure ◽  
Degrees Of Freedom ◽  
Structural Model ◽  
Computational Study ◽  
Oxidative Polymerization ◽  
Radical Scavenging ◽  
Charge Carriers ◽  
Electronic Charge ◽  
Polymer Semiconductors ◽  
Synthetic Pigments

<div><div><div><p>Eumelanins are a family of natural and synthetic pigments obtained by oxidative polymerization of their natural precursors: 5,6 dihydroxyindole and its 2-carboxy derivative (DHICA). The simultaneous presence of ionic and electronic charge carriers makes these pigments promising materials for applications in bioelectronics. In this computational study we build a structural model of DHICA melanin considering the interplay between its many degrees of freedom, then we examine the electronic structure of representative oligomers. We find that a non-vanishing dipole along the polymer chain sets this system apart from conventional polymer semiconductors, determining its electronic structure, reactivity toward oxidation and localization of the charge carriers. Our work sheds light on previously unnoticed features of DHICA melanin that not only fit well with its radical scavenging and photoprotective properties, but open new perspectives towards understanding and tuning charge transport in this class of materials.<br></p></div></div></div>

III-V MOSFETs: Surface Passivation, Source/Drain and Channel Strain Engineering, Self-Aligned Contact Metallization

2019 ◽  
Vol 35 (3) ◽  
pp. 351-361 ◽  
Author(s):  
Yee-Chia Yeo ◽  
Hock-Chun Chin ◽  
Xiao Gong ◽  
Huaxin Guo ◽  
Xingui Zhang
Keyword(s):  
Surface Passivation ◽  
Strain Engineering ◽  
Contact Metallization

Side-Chain-Induced Rigid Backbone Organization of Polymer Semiconductors through Semifluoroalkyl Side Chains

2016 ◽  
Vol 138 (11) ◽  
pp. 3679-3686 ◽  
Author(s):  
Boseok Kang ◽  
Ran Kim ◽  
Seon Baek Lee ◽  
Soon-Ki Kwon ◽  
Yun-Hi Kim ◽  
...  
Keyword(s):  
Side Chain ◽  
Side Chains ◽  
Polymer Semiconductors

Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

2009 ◽  
Vol 615-617 ◽  
pp. 565-568 ◽  
Author(s):  
Alexander A. Lebedev ◽  
A.E. Belyaev ◽  
N.S. Boltovets ◽  
V.N. Ivanov ◽  
Raisa V. Konakova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Heat Resistance ◽  
Contact Structure ◽  
Schottky Barriers ◽  
Electrophysical Properties ◽  
Depth Profiles ◽  
Contact Metallization ◽  
Before And After ◽  
Concentration Depth Profiles

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

Imide‐Functionalized Polymer Semiconductors

2018 ◽  
Vol 25 (1) ◽  
pp. 87-105 ◽  
Author(s):  
Huiliang Sun ◽  
Lei Wang ◽  
Yingfeng Wang ◽  
Xugang Guo
Keyword(s):  
Polymer Semiconductors

Development of Polymer Semiconductors for Field-Effect Transistor Devices in Displays

2009 ◽  
pp. 393-429
Author(s):  
Rick Hamilton ◽  
Martin Heeney ◽  
Thomas Anthopoulos ◽  
Iain McCulloch
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Polymer Semiconductors ◽  
Effect Transistor

scholarly journals Behavior of W and WSix Contact Metallization on n- and p- Type GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 684-690
Author(s):  
X. A. Cao ◽  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Ohmic Behavior ◽  
Contact Metallization ◽  
Specific Contact ◽  
Heavily Doped ◽  
Sputter Deposited ◽  
Optimum Annealing Temperature ◽  
P Type

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

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