Modeling and analysis for thermal management in gallium oxide field-effect transistors

2020 ◽  
Vol 127 (15) ◽  
pp. 154502
Author(s):  
Chao Yuan ◽  
Yuewei Zhang ◽  
Robert Montgomery ◽  
Samuel Kim ◽  
Jingjing Shi ◽  
...  
Keyword(s):  
Thermal Management ◽  
Gallium Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Modeling And Analysis

scholarly journals Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

2019 ◽  
Vol 9 (12) ◽  
pp. 2352-2365 ◽  
Author(s):  
Bikramjit Chatterjee ◽  
Ke Zeng ◽  
Christopher D. Nordquist ◽  
Uttam Singisetti ◽  
Sukwon Choi
Keyword(s):  
Thermal Management ◽  
Gallium Oxide ◽  
Field Effect ◽  
Field Effect Transistors

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

2019 ◽  
Vol 28 (1) ◽  
pp. 017105 ◽  
Author(s):  
Zeng Liu ◽  
Pei-Gang Li ◽  
Yu-Song Zhi ◽  
Xiao-Long Wang ◽  
Xu-Long Chu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Schottky Barrier Diodes

Flip Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETs

2005 ◽  
Vol 892 ◽  
Author(s):  
Hangfeng Ji ◽  
Andrei Sarua ◽  
Martin Kuball ◽  
Jo Das ◽  
Wouter Ruythooren ◽  
...  
Keyword(s):  
Thermal Management ◽  
Field Effect ◽  
Flip Chip ◽  
Field Effect Transistors ◽  
Operating Temperature ◽  
Ir Thermography ◽  
Device Management ◽  
Micro Raman Spectroscopy ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

AbstractWe report on a temperature study of flip-chip mounted multi-finger AlGaN/GaN heterostructure field effect transistors (HFETs) using micro-Raman spectroscopy and infrared (IR) thermography. Flip-chip mounting can be used to improve thermal device management, in particular, for devices grown on low thermal conductivity substrates such as sapphire. In this study, we compare two flip-chip mounted HFETs of different flip-chip contact bump layout designs and a non flip-chip mounted HFET. Both temperature measurements and 3D temperature simulations are presented. The results show that minimizing the distance between the bumps and the active area of the HFET is essential for obtaining a low device operating temperature.

β-gallium oxide power field-effect transistors

2020 ◽  
Author(s):  
Hang Dong ◽  
Guangwei Xu ◽  
Xuanze Zhou ◽  
Wenhao Xiong ◽  
Xueqiang Xiang ◽  
...  
Keyword(s):  
Gallium Oxide ◽  
Field Effect ◽  
Field Effect Transistors

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2012 ◽  
Vol 100 (1) ◽  
pp. 013504 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Akito Kuramata ◽  
Takekazu Masui ◽  
Shigenobu Yamakoshi
Keyword(s):  
Single Crystal ◽  
Gallium Oxide ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors

2014 ◽  
Vol 04 (03) ◽  
pp. 119-127 ◽  
Author(s):  
Jihen Chermiti ◽  
Sawsen Azzouzi ◽  
Mounir Ben Ali ◽  
Mhamed Trabelsi ◽  
Abdelhamid Errachid
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Modeling And Analysis
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