scholarly journals Effect of annealing pressure on surface oxidation in annealing process for LaFe11.5Si1.5C0.13 strips

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025104
Author(s):  
Jianing Xue ◽  
Yi Long ◽  
Yixu Wang ◽  
Jingming Shi ◽  
He Zhou ◽  
...  
Keyword(s):  
Surface Oxidation ◽  
Annealing Process ◽  
Annealing Pressure

4H-SiC MOSFET Source and Body Laser Annealing Process

2020 ◽  
Vol 1004 ◽  
pp. 705-711
Author(s):  
Cristiano Calabretta ◽  
Marta Agati ◽  
Massimo Zimbone ◽  
Simona Boninelli ◽  
Andrea Castiello ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Annealing Process ◽  
Surface Roughening ◽  
Dopant Activation ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Recovery Technique ◽  
Lattice Damage

This work describes the development of a new post-implant crystal recovery technique in 4H-SiC using XeCl (l=308 nm) multiple laser pulses in the ns regime. Characterization was carried out through micro-Raman spectroscopy, Photoluminescence (PL), Transmission Electron Microscopy (TEM) and outcomes were than compared with 1h thermally annealed at 1650-1770-1750 °C P implanted samples (source implant) and P and Al implanted samples for 30 minutes at 1650 °C (source and body implants). Experimental results demonstrate that laser annealing enables crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Unlike the results obtained with thermal annealing where stress up to 172 Mpa and high carbon vacancies (Vc) concentration is recorded, laser annealing provides almost stress free samples and much less defective crystal avoiding intra-bandgap carrier recombination. Implant was almost preserved except for step-bouncing and surface oxidation phenomena leading to surface roughening. However, the results of this work gives way to laser annealing process practicability for lattice damage recovery and dopant activation.

scholarly journals THE EFFECT OF ANNEALING PRESSURE AND TIME ON THE CRYSTALLINITY OF CZTSe

2019 ◽  
Vol 26 (02) ◽  
pp. 1850151 ◽  
Author(s):  
RAMAZAN KATIRCI ◽  
JOHN MICHAEL WALLS
Keyword(s):  
Crystal Structure ◽  
Raman Spectroscopy ◽  
Annealing Time ◽  
Annealing Process ◽  
Additional Benefit ◽  
Secondary Phases ◽  
Annealing Pressure

In this study, the effect of annealing pressure and time on the homogeneity and the formation of kesternite (Cu2ZnSnSe4; CZTSe) structure was investigated. The deposition of CZTSe coating was carried out using an electroplating method. The morphology and crystal structure of the coating were investigated using SEM–EDS, XRD and Raman spectroscopy. CZTSe films with optimized crystallinity and uniformity were obtained using an annealing process performed at 10 Torr for 1[Formula: see text]h. The use of lower pressures increases the crystallinity and the purity of CZTSe film and decreases the density of secondary phases and the annealing time provides an additional benefit.

scholarly journals Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3362 ◽  
Author(s):  
Cristiano Calabretta ◽  
Marta Agati ◽  
Massimo Zimbone ◽  
Simona Boninelli ◽  
Andrea Castiello ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Annealing Process ◽  
Epitaxial Layers ◽  
Extended Defects ◽  
Experimental Activity ◽  
Transmission Electron ◽  
Testing Chamber ◽  
Process Viability

This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 1 h as well as P and Al implanted samples annealed at 1650 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.

Growth of hematite by surface oxidation of olivine

1988 ◽  
Vol 46 ◽  
pp. 800-801
Author(s):  
S. McKernan ◽  
C. B. Carter
Keyword(s):  
Electron Microscope ◽  
Surface Oxidation ◽  
Thin Foil ◽  
Nucleation And Growth ◽  
Ion Milling ◽  
Annealed Material ◽  
Thin Foils ◽  
Natural Olivine ◽  
Approximate Composition ◽  
Second Phases

The oxidation of natural olivine has previously been performed on bulk samples and the reactions followed by preparation of TEM specimens from the annealed material. These results show that below ∼1000°C hematite and amorphous silica are formed, particularly around dislocations. At higher temperatures magnetite and some enstatite-like phase are formed. In both cases the olivine is left almost totally Fe depleted. By performing the oxidation on characterized thin TEM specimens it is possible to obtain more information on the nucleation and growth of the second phases formed. The conditions in a thin foil, however, are very different from those in the bulk especially with regard to surface effects. The nucleation of precipitates in particular may be expected to occur differently in these thin foils than in the bulk.TEM specimens of natural olivine (approximate composition Mg+Fe+Si2o4) which had been annealed at 1000°C for 1 hr were prepared by mechanical polishing and dimpling, followed by Ar ion milling to perforation. The specimens were characterized in the electron microscope and then heated in air in alumina boats to 900°C for between 30 and 180 minutes.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

KINETICS OF SURFACE OXIDATION AND RELATED CHANGES IN THE MAGNETISM OF AMORPHOUS TbFeCo FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1711-C8-1712 ◽  
Author(s):  
S. Klahn ◽  
H. Heitmann ◽  
M. Rosenkranz ◽  
H. J. Tolle
Keyword(s):  
Surface Oxidation ◽  
Kinetics Of

Design of spline surface vacuum gripper for pick and place robotic arms

2020 ◽  
Vol 4 (2) ◽  
pp. 48-55
Author(s):  
A. S. Jamaludin ◽  
M. N. M. Razali ◽  
N. Jasman ◽  
A. N. A. Ghafar ◽  
M. A. Hadi
Keyword(s):  
Cycle Time ◽  
Industrial Robot ◽  
Annealing Process ◽  
Vacuum Suction ◽  
Robotic Arms ◽  
Custom Made ◽  
Pick And Place ◽  
Manufacturing Procedure ◽  
Production Flexibility ◽  
The Impact

The gripper is the most important part in an industrial robot. It is related with the environment around the robot. Today, the industrial robot grippers have to be tuned and custom made for each application by engineers, by searching to get the desired repeatability and behaviour. Vacuum suction is one of the grippers in Watch Case Press Production (WCPP) and a mechanism to improve the efficiency of the manufacturing procedure. Pick and place are the important process for the annealing process. Thus, by implementing vacuum suction gripper, the process of pick and place can be improved. The purpose of vacuum gripper other than design vacuum suction mechanism is to compare the effectiveness of vacuum suction gripper with the conventional pick and place gripper. Vacuum suction gripper is a mechanism to transport part and which later sequencing, eliminating and reducing the activities required to complete the process. Throughout this study, the process pick and place became more effective, the impact on the production of annealing process is faster. The vacuum suction gripper can pick all part at the production which will lower the loss of the productivity. In conclusion, vacuum suction gripper reduces the cycle time about 20%. Vacuum suction gripper can help lower the cycle time of a machine and allow more frequent process in order to increase the production flexibility.

Effects of Wet Chemical Oxidation on Surface Functionalization and Morphology of Highly Oriented Pyrolytic Graphite

2020 ◽  
Author(s):  
Mikhail Trought ◽  
Isobel Wentworth ◽  
Timothy Leftwich ◽  
Kathryn Perrine
Keyword(s):  
Surface Functionalization ◽  
Functional Group ◽  
Pyrolytic Graphite ◽  
Surface Oxidation ◽  
Chemical Oxidation ◽  
Synthesis Methods ◽  
Acid Solutions ◽  
Highly Oriented Pyrolytic Graphite ◽  
Wet Chemical ◽  
Surface Morphologies

The knowledge of chemical functionalization for area selective deposition (ASD) is crucial for designing the next generation heterogeneous catalysis. Surface functionalization by oxidation was studied on the surface of highly oriented pyrolytic graphite (HOPG). The HOPG surface was exposed to with various concentrations of two different acids (HCl and HNO3). We show that exposure of the HOPG surface to the acid solutions produce primarily the same -OH functional group and also significant differences the surface topography. Mechanisms are suggested to explain these strikingly different surface morphologies after surface oxidation. This knowledge can be used to for ASD synthesis methods for future graphene-based technologies.

scholarly journals Non-Thermal Plasma-Modified Ru-Sn-Ti Catalyst for Chlorinated Volatile Organic Compound Degradation

Catalysts ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1456
Author(s):  
Yujie Fu ◽  
You Zhang ◽  
Qi Xin ◽  
Zhong Zheng ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
High Surface ◽  
High Surface Area ◽  
Surface Oxidation ◽  
Treatment Method ◽  
X Ray ◽  
Chlorinated Volatile Organic Compounds ◽  
Volatile Organic ◽  
Doped Titania

Chlorinated volatile organic compounds (CVOCs) are vital environmental concerns due to their low biodegradability and long-term persistence. Catalytic combustion technology is one of the more commonly used technologies for the treatment of CVOCs. Catalysts with high low-temperature activity, superior selectivity of non-toxic products, and resistance to chlorine poisoning are desirable. Here we adopted a plasma treatment method to synthesize a tin-doped titania loaded with ruthenium dioxide (RuO2) catalyst, possessing enhanced activity (T90%, the temperature at which 90% of dichloromethane (DCM) is decomposed, is 262 °C) compared to the catalyst prepared by the conventional calcination method. As revealed by transmission electron microscopy, X-ray diffraction, N2 adsorption, X-ray photoelectron spectroscopy, and hydrogen temperature-programmed reduction, the high surface area of the tin-doped titania catalyst and the enhanced dispersion and surface oxidation of RuO2 induced by plasma treatment were found to be the main factors determining excellent catalytic activities.

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