scholarly journals Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025110 ◽  
Author(s):  
Chandni Kumari ◽  
Ishan Varun ◽  
Shree Prakash Tiwari ◽  
Ambesh Dixit
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Interfacial Layer ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Bifeo3 Thin Films

Nonvolatile bipolar resistive switching in Ba-doped BiFeO3 thin films

2015 ◽  
Vol 109 ◽  
pp. 72-75 ◽  
Author(s):  
Haoliang Deng ◽  
Ming Zhang ◽  
Jizhou Wei ◽  
Shangjie Chu ◽  
Minyong Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Bifeo3 Thin Films

scholarly journals Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films

2018 ◽  
Vol 120 ◽  
pp. 67-74 ◽  
Author(s):  
Chandni Kumari ◽  
Ishan Varun ◽  
Shree Prakash Tiwari ◽  
Ambesh Dixit
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Bipolar Resistive Switching ◽  
Bifeo3 Thin Films

Improved Resistive Switching Properties of Solution Processed TiO[sub 2] Thin Films

2010 ◽  
Vol 13 (12) ◽  
pp. H443 ◽  
Author(s):  
Kuyyadi P. Biju ◽  
Xinjun Liu ◽  
El Mostafa Bourim ◽  
Insung Kim ◽  
Seungjae Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Solution Processed

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

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