Interfacial atomic structure and electrical activity of nano-facetted CSL grain boundaries in high-performance multi-crystalline silicon

2020 ◽  
Vol 127 (12) ◽  
pp. 125109 ◽  
Author(s):  
M. G. Tsoutsouva ◽  
P. E. Vullum ◽  
K. Adamczyk ◽  
M. Di Sabatino ◽  
G. Stokkan
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
High Performance ◽  
Crystalline Silicon

scholarly journals Atomic Structure and Electrical Activity of Grain Boundaries and Ruddlesden-Popper Faults in Cesium Lead Bromide Perovskite

2018 ◽  
Vol 31 (4) ◽  
pp. 1805047 ◽  
Author(s):  
Arashdeep Singh Thind ◽  
Guangfu Luo ◽  
Jordan A. Hachtel ◽  
Maria V. Morrell ◽  
Sung Beom Cho ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Lead Bromide

Surface reconstructions of (001) cleaved GdBa2Cu3O7-δ

1992 ◽  
Vol 50 (1) ◽  
pp. 106-107
Author(s):  
H.W. Zandbergen ◽  
M.R. McCartney
Keyword(s):  
Electron Microscopy ◽  
Copper Oxide ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Oxygen Deficiency ◽  
Surface Layers ◽  
Layer Sequence ◽  
Surface Reconstructions ◽  
Good Agreement

Very few electron microscopy papers have been published on the atomic structure of the copper oxide based superconductor surfaces. Zandbergen et al. have reported that the surface of YBa2Cu3O7-δ was such that the terminating layer sequence is bulk-Y-CuO2-BaO-CuO-BaO, whereas the interruption at the grain boundaries is bulk-Y-CuO2-BaO-CuO. Bursill et al. reported that HREM images of the termination at the surface are in good agreement with calculated images with the same layer sequence as observed by Zandbergen et al. but with some oxygen deficiency in the two surface layers. In both studies only one or a few surfaces were studied.

Morphology and atomic structure of segregated grain boundaries in Cu-Sb

1992 ◽  
Vol 50 (1) ◽  
pp. 254-255
Author(s):  
R. W. Fonda ◽  
D. E. Luzzi
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Intergranular Fracture ◽  
Atomic Structure ◽  
Copper Alloys ◽  
Polycrystalline Materials ◽  
Grain Boundary Embrittlement ◽  
Boundary Embrittlement

The properties of polycrystalline materials are strongly dependant upon the strength of internal boundaries. Segregation of solute to the grain boundaries can adversely affect this strength. In copper alloys, segregation of either bismuth or antimony to the grain boundary will embrittle the alloy by facilitating intergranular fracture. Very small quantities of bismuth in copper have long been known to cause severe grain boundary embrittlement of the alloy. The effect of antimony is much less pronounced and is observed primarily at lower temperatures. Even though moderate amounts of antimony are fully soluble in copper, concentrations down to 0.14% can cause grain boundary embrittlement.

ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON GROWN WITH AN ALUMINIUM CONTENT GRADIENT

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-439-C1-444 ◽  
Author(s):  
T. BENABBAS ◽  
C. CABANEL ◽  
J. Y. LAVAL ◽  
J. L. PASTOL ◽  
NGUYEN DINH HUYNH
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries ◽  
Aluminium Content

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

Atomic structure of [0001]-tilt grain boundaries in ZnO:  A high-resolution TEM study of fiber-textured thin films

2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
High Resolution Tem

Atomic Structure and Property Correlation in Pulsed Laser Deposited High -Tc Films

1998 ◽  
Vol 526 ◽  
Author(s):  
R. Kalyanaraman ◽  
S. Oktyabrsky ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Structure And Property ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Z Contrast

AbstractThe atomic structure of grain boundaries in pulsed laser deposited YBCO/MgO thin films have been studied using transmission electron microscopy. The films have perfect texturing with YBCO(001)//MgO(001), giving rise to low-angle [001] tilt boundaries from the grains with the c-axis normal to substrate surface. Low angle grain boundaries have been found to be aligned preferentially along (100) and (110) interface planes. The energy of (110) boundary planes described by an alternating array of [100] and [010] dislocation is found to be comparable to the energy of a (100) boundary. The existence of these split dislocations is shown to further reduce the theoretical current densities of these boundaries indicating that (110) boundaries carry less current as compared to (100) boundaries of the same misorientation angle. Further, Z-contrast transmission electron microscopy of a 42° asymmetric high-angle grain boundary of YBCO shows evidence for the existence of boundary fragments and a reduced atomic density along the boundary plane

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