Investigation of structural and optical properties of Ytterbium modified tin oxide thin films for gas sensing application

2019 ◽  
Author(s):  
S. Deepa ◽  
K. Prasanna Kumari ◽  
Asmin Saidh
2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ateyyah M. Al-Baradi ◽  
Ahmed A. Atta ◽  
Ali Badawi ◽  
Saud A. Algarni ◽  
Abdulraheem S. A. Almalki ◽  
...  

Abstract In the current work, the optical properties of tin oxide thin films have been tailored via gamma irradiation for energy applications. The effect of Gamma radiation (50, 100, 150, 200 and 250 kGy) on the microstructural, absorption and oscillator parameters of SnO2 thin films has been investigated. XRD results reveal that the SnO2 films have the symmetry of the space group P42/mnm belonging to the tetragonal system. The crystallite size of γ-irradiated SnO2 thin film slightly increases as the irradiation dose increases. The allowed optical band gaps are estimated by applying various methods such as Tauc’s method, derivation of absorption spectrum fitting and absorption spectrum fitting approaches. The dispersion parameters are extracted from the dispersion curve of the real part of the refractive index. The single-effective-oscillator and Drude models for free charge carrier absorption are applied to obtain the dispersion parameters before and after γ-irradiation.


2018 ◽  
Vol 215 (24) ◽  
pp. 1800379 ◽  
Author(s):  
Aus A. Najim ◽  
Hassan H. Darwoysh ◽  
Yasmeen Z. Dawood ◽  
Salah Q. Hazaa ◽  
Ammar T. Salih

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