scholarly journals Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers

AIP Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 125330 ◽  
Author(s):  
H. Honjo ◽  
T. V. A. Nguyen ◽  
M. Yasuhira ◽  
M. Niwa ◽  
S. Ikeda ◽  
...  
Keyword(s):  
Thermal Tolerance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer ◽  
Capping Layer ◽  
Layer Material

scholarly journals Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits

2021 ◽  
Vol 15 (4) ◽  
Author(s):  
Kerem Y. Camsari ◽  
Mustafa Mert Torunbalci ◽  
William A. Borders ◽  
Hideo Ohno ◽  
Shunsuke Fukami
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Characterization of magnetic tunnel junctions (MTJ) with magnetostrictive free layer materials

2004 ◽  
Vol 272-276 ◽  
pp. 2023-2024 ◽  
Author(s):  
M. Löhndorf ◽  
S. Dokupil ◽  
J. Wecker ◽  
M. Rührig ◽  
E. Quandt
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance

2016 ◽  
Vol 10 (1) ◽  
pp. 013001 ◽  
Author(s):  
Motoya Shinozaki ◽  
Eriko Hirayama ◽  
Shun Kanai ◽  
Hideo Sato ◽  
Fumihiro Matsukura ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

scholarly journals Nanoscale true random bit generator based on magnetic state transitions in magnetic tunnel junctions

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Alex S. Jenkins ◽  
Lara San Emeterio Alvarez ◽  
Paulo P. Freitas ◽  
Ricardo Ferreira
Keyword(s):  
Tunnel Junctions ◽  
Magnetic State ◽  
Magnetic Tunnel Junctions ◽  
Vortex State ◽  
Magnetic Vortex ◽  
State Transitions ◽  
Free Layer ◽  
Plane Field ◽  
Random Bit Generator ◽  
Ac Current

Abstract We present an investigation into the in-plane field induced free layer state transitions found in magnetic tunnel junctions. By applying an ac current into an integrated field antenna, the magnetisation of the free layer can be switched between the magnetic vortex state and the quasi-uniform anti-parallel state. When in the magnetic vortex state, the vortex core gyrates a discrete number of times, and at certain frequencies there is a 50% chance of the core gyrating n or n − 1 times, leading to the proposal of a novel nanoscale continuous digital true random bit generator.

scholarly journals Reduction of switching time in pentalayer magnetic tunnel junctions with a composite-free layer

2011 ◽  
Vol 5 (12) ◽  
pp. 420-422 ◽  
Author(s):  
Alexander Makarov ◽  
Viktor Sverdlov ◽  
Dmitry Osintsev ◽  
Siegfried Selberherr
Keyword(s):  
Switching Time ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Detection of Sub-Nano-Tesla Magnetic Field by Integrated Magnetic Tunnel Junctions with Bottom Synthetic Antiferro-Coupled Free Layer

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CM07 ◽  
Author(s):  
Kosuke Fujiwara ◽  
Mikihiko Oogane ◽  
Takuo Nishikawa ◽  
Hiroshi Naganuma ◽  
Yasuo Ando
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

scholarly journals Transmission Electron Microscopy Study on the Crystallization of Ion Beam Assisted Deposited CoFeB/MgO/CoFeB Magnetic Tunnel Junctions with Tantalum Capping Layer

2011 ◽  
Vol 17 (S2) ◽  
pp. 1860-1861
Author(s):  
R Petrova ◽  
R Ferreira ◽  
S Cardoso ◽  
P Freitas ◽  
S McVitie ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Tunnel Junctions ◽  
Ion Beam ◽  
Magnetic Tunnel Junctions ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Capping Layer ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

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