High-temperature continuous molecular beam source for aggressive elements: An example of zinc

2019 ◽  
Vol 90 (11) ◽  
pp. 115109 ◽  
Author(s):  
J. Dudek ◽  
K. Puczka ◽  
T. Urbańczyk ◽  
J. Koperski
Keyword(s):  
High Temperature ◽  
Molecular Beam ◽  
Beam Source

High‐temperature supersonic molecular‐beam source

1992 ◽  
Vol 63 (8) ◽  
pp. 3939-3943 ◽  
Author(s):  
D. J. Auerbach ◽  
C. T. Rettner
Keyword(s):  
High Temperature ◽  
Molecular Beam ◽  
Beam Source ◽  
Supersonic Molecular Beam

Cluster Beam Deposition of High Temperature Material

1990 ◽  
Vol 206 ◽  
Author(s):  
William J. Herron ◽  
James F. Garvey
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam ◽  
Industrial Applications ◽  
Carbon Films ◽  
Cluster Beam ◽  
Beam Source ◽  
Pulse Delay ◽  
High Temperature Material ◽  
Cluster Beam Deposition

ABSTRACTWe present our latest attempts to utilize a Smalley-type cluster beam source, to generate novel thin films. This technique employs entraining, within a high pressure molecular beam expansion, the products generated from laser ablation of a rotating target rod. We will show how such a cluster beam source can be used to generate a high temperature material within a molecular beam and deposit it intact on a relatively cool substrate. By tailoring the various expansion conditions (ie., expansion pressure, laser fluence, type of carrier gas, pulse delay, etc...) one can drastically effect the morphology and chemical nature of the surface generated. This technique has the promise that it may be able to fabricate a wide variety of thin films with obvious industrial applications (superconducting thin films, diamond-like carbon films, patterned or multi-layered thin films, etc...)

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
C.T. Foxon ◽  
T.S. Cheng ◽  
D. Korakakis ◽  
S.V. Novikov ◽  
R.P. Campion ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Boundary Structure ◽  
Quantum Well Structures ◽  
Flat Surfaces ◽  
Grain Boundary Structure ◽  
Bulk Gan ◽  
Atomically Flat

AbstractVarious methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas. Multi-Quantum Well structures grown on such GaN epitaxial films are dislocation free with abrupt interfaces.

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

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