scholarly journals Apparatus design for measuring of the strain dependence of the Seebeck coefficient of single crystals

2020 ◽  
Vol 91 (2) ◽  
pp. 023902
Author(s):  
Tiema Qian ◽  
Joshua Mutch ◽  
Lihua Wu ◽  
Preston Went ◽  
Qianni Jiang ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Single Crystals ◽  
Strain Dependence ◽  
Apparatus Design

Seebeck coefficient of poly and single crystals of La(2−x)Sr(x)CuO4

1997 ◽  
Vol 101 (5) ◽  
pp. 389-392 ◽  
Author(s):  
M. Shiloh ◽  
K. Zhang ◽  
R. Mogilevsky ◽  
D.G. Hinks
Keyword(s):  
Seebeck Coefficient ◽  
Single Crystals

scholarly journals Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055005 ◽  
Author(s):  
Johannes Boy ◽  
Martin Handwerg ◽  
Rüdiger Mitdank ◽  
Zbigniew Galazka ◽  
Saskia F. Fischer
Keyword(s):  
Charge Carrier ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Carrier Density ◽  
Charge Carrier Density

Synthesis and Thermoelectric Properties of Ba8Ga16+xSbxGe30-2x (x=0,1) Clathrate Single Crystals

2008 ◽  
Vol 368-372 ◽  
pp. 553-555
Author(s):  
H.F. Wang ◽  
Ke Feng Cai ◽  
H. Li ◽  
L. Wang ◽  
X.L. Li
Keyword(s):  
Electron Microscopy ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Czochralski Method ◽  
X Ray Diffraction ◽  
Flux Method ◽  
X Ray ◽  
Type Semiconductor ◽  
P Type ◽  
Scanning Electron

Ba8Ga16Ge30 clathrate material has being intensely investigated as a candidate of promising thermoelectric materials. In this work, Ba8Ga16+xSbxGe30-2x (x=0,1) single crystals have been synthesized by the Ga flux method, using high purity elemental Ba, Sb, Ga, and Ge as starting materials. Powder X-ray diffraction, Scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy and Raman spectroscopy were used to characterize the single crystals. Seebeck coefficient of the crystals was measured from 300 to 800 K. The result indicates that the crystals are p-type semiconductor, which is different from the crystals synthesized by the Czochralski method. The Seebeck coefficient almost does not change after doping Sb in the whole temperature measured and it is in the range of 200 to 300μV/K.

Electron Transport Phenomena in NiS2−xSex Single Crystals

1996 ◽  
Vol 453 ◽  
Author(s):  
X. Yao ◽  
S. Ehrlich ◽  
G. Liedlb ◽  
T. Hogan ◽  
C. Kannewurf ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Electron Correlation ◽  
Large Scale ◽  
Structural Changes ◽  
Dominant Role ◽  
Magnetic Ordering ◽  
Structural Studies ◽  
Complex Temperature

AbstractStructural studies, electrical resistivity, and Seebeck coefficient measurements are reported in the range 4.2 − 300 K for single crystals of NiS2−xSex (0 ≤ x ≤ 0.71) grown from a Te melt. Over the entire temperature and composition ranges there are no large scale structural changes concomitant to a variety of magnetic ordering phenomena, and to a changeover from insulating to metallic characteristics as x increases. Thus, the evolution in transport characteristics with x can be studied without interference from the lattice; moreover, the electron count is unaffected by substitution of Se for S. The existence of anomalous peaks in resistivity as a function of temperature is attributed to significant electron correlation phenomena which allow the entropy of charge carrier to play a dominant role. The complex temperature dependence of the Seebeck coefficient is attributed to the participation of both electrons and holes in charge transport.

Seebeck coefficient of quasi-two-dimensional SnSxSe2−x crystals

1985 ◽  
Vol 63 (11) ◽  
pp. 1405-1408 ◽  
Author(s):  
Y. Frongillo ◽  
M. Aubin ◽  
S. Jandl
Keyword(s):  
Seebeck Coefficient ◽  
Single Crystals ◽  
Conduction Band ◽  
Hall Coefficient ◽  
Large Temperature ◽  
Two Dimensional ◽  
Bridgman Technique ◽  
Absolute Value ◽  
Conduction Mechanisms ◽  
Iodine Transport

We have measured the Seebeck coefficient of quasi-two-dimensional single crystals of SnSe2, SnS0.1Se1.9, and SnS0.3Se1.7, grown by the Bridgman technique, and SnSe2, grown by iodine transport, over a large temperature range varying from 15 (4.2 for SnSe2) to 300 K. To assist in the interpretation of these results, the Hall coefficient and resistivity were measured on SnSe2 and SnS0.1Se1.9 Bridgman samples. All these measurements were done in a plane perpendicular to the c axis. It was found that, as the temperature decreases, the absolute value of the Seebeck coefficient decreases slightly before a surprisingly large increase at the lowest temperatures. We interpret these results as the manifestation of two conduction mechanisms: electrons in the conduction band and hopping of electrons between impurities.

Electrical conductivity and seebeck coefficient of Si2Te3 single crystals

1976 ◽  
Vol 37 (1) ◽  
pp. K97-K99 ◽  
Author(s):  
K. Ziegler ◽  
H.-D. Junker ◽  
U. Birkholz
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Single Crystals

The Magneto-Seebeck Coefficient of Bismuth Single Crystals

1974 ◽  
Vol 63 (1) ◽  
pp. 163-169 ◽  
Author(s):  
C. Uher ◽  
H. J. Goldsmid
Keyword(s):  
Seebeck Coefficient ◽  
Single Crystals

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

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