scholarly journals Magnetization reversal, damping properties and magnetic anisotropy of L10-ordered FeNi thin films

2019 ◽  
Vol 115 (20) ◽  
pp. 202402
Author(s):  
V. Thiruvengadam ◽  
B. B. Singh ◽  
T. Kojima ◽  
K. Takanashi ◽  
M. Mizuguchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Damping Properties

Magnetic anisotropy and magnetization reversal of La0.67Sr0.33MnO3 thin films on SrTiO3(110)

2010 ◽  
Vol 108 (10) ◽  
pp. 103906 ◽  
Author(s):  
Hans Boschker ◽  
Jaap Kautz ◽  
Evert P. Houwman ◽  
Gertjan Koster ◽  
Dave H. A. Blank ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal

scholarly journals Uniaxial magnetic anisotropy induced by vicinal surfaces in half metallic La0.7Sr0.3MnO3 thin films

2009 ◽  
Vol 1198 ◽  
Author(s):  
Paolo Perna ◽  
Erika Jiménez ◽  
Francisco J. Terán ◽  
Laurence Méchin ◽  
Julio Camarero ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Substrate Surface ◽  
Uniaxial Anisotropy ◽  
Current Theory ◽  
Vicinal Surfaces ◽  
Direction Parallel ◽  
Half Metallic ◽  
Crystalline Symmetry

AbstractWe present a detailed study of the angular dependence of the magnetization reversal at room temperature of well characterized epitaxial La0.7Sr0.3MnO3 (001) thin films grown onto SrTiO3 (001) vicinal substrates. The step edges at the substrate surface promote a topological modulation of the films along the step direction, breaking the four-fold magneto crystalline symmetry and favoring a two-fold magnetic anisotropy term. The competition between the biaxial and uniaxial anisotropy is depicted within the framework of the current theory, resulting in a vanishing biaxial contribution. The films hence show the magnetization easy (hard) direction parallel (perpendicular) to the steps direction. The thickness-dependent of both anisotropy and magnetization reversal are discussed in terms of topographic changes.

Magnetization reversal and magnetic anisotropy in patterned Co/Pd multilayer thin films

2008 ◽  
Vol 103 (2) ◽  
pp. 023920 ◽  
Author(s):  
Darren Smith ◽  
Vishal Parekh ◽  
Chunsheng E ◽  
Shishan Zhang ◽  
Wolfgang Donner ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Multilayer Thin Films

Spin Reorientation Transition and Magnetization Reversal Mechanism of Gd Doped FeCo High-Frequency Soft Magnetic Thin Films

2014 ◽  
Vol 924 ◽  
pp. 141-151 ◽  
Author(s):  
Yu Rong An ◽  
Yue Li ◽  
Zhen Wang ◽  
Ya Lu Zuo ◽  
Li Xi
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
High Frequency ◽  
Uniaxial Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Sputtering Power ◽  
Deposition Power ◽  
Reversal Mechanism

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field Hkdecreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.

Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ion Irradiation ◽  
Magnetic Nanostructures ◽  
Magnetic Storage ◽  
Exchange Field ◽  
Static Magnetization ◽  
Specific Domain ◽  
Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

Sign in / Sign up

Export Citation Format

Share Document