scholarly journals Assessment of the energy yield gain in high CPV systems using graphene-enhanced III-V multijunction solar cells

Author(s):  
Ignacio Rey-Stolle ◽  
Laura Barrutia ◽  
Iván García ◽  
Carlos Algora
2014 ◽  
Vol 1638 ◽  
Author(s):  
Haohui Liu ◽  
Zekun Ren ◽  
Zhe Liu ◽  
Riley E. Brandt ◽  
Jonathan P. Mailoa ◽  
...  

ABSTRACTIII-V on Si multijunction solar cells represent an alternative to traditional compound III-V multijunction cells as a promising way to achieve high efficiencies. A theoretical study on the energy yield of GaAs/Si tandem solar cells is performed to assess the performance potential and sensitivity to spectral variations. Recorded time-dependent spectral irradiance data in two locations (Singapore and Denver) were used. We found that a 4-terminal contact scheme with thick top cell confers distinctive advantages over a 2-terminal scheme, giving a yield potential 21% higher than the 2-terminal scheme in Singapore and 17% higher in Denver. The theoretical energy yield benefit of a 4-terminal device emphasizes the need for further technology development in this design space.


Author(s):  
Ulrich W. Paetzold ◽  
Robert Gehlhaar ◽  
Jeffrey G. Tait ◽  
Weiming Qiu ◽  
Joao Bastos ◽  
...  

2015 ◽  
Vol 5 (1) ◽  
pp. 438-445 ◽  
Author(s):  
Ivan Garcia ◽  
William E. McMahon ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Aron Habte ◽  
...  

2010 ◽  
Vol 1245 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Jan Willem Schüttauf ◽  
Karine van der Werf

AbstractProtocrystalline silicon, which is a material that has enhanced medium range order (MRO), can be prepared by using high hydrogen dilution in PECVD, or, alternatively, using high atomic H production from pure silane in HWCVD. We show that this material can accommodate percentage-level concentrations of oxygen without deleterious effects. The advantage of protocrystalline SiO:H for application in multijunction solar cells is not only that it has an increased band gap, providing a better match with the solar spectrum, but also that the solar cells incorporating this material have a reduced temperature coefficient. Further, protocrystalline materials have a reduced susceptibility to light-induced defect creation. We present the unique result in the PV field that these oxygenated protocrystalline silicon solar cells have an efficiency temperature coefficient (TCE) that is virtually zero (TCE is between -0.08%/°C and 0.0/°C). It is thus beneficial to make this cell the current limiting cell in multibandgap cells, which will lead to improved annual energy yield.


2020 ◽  
Vol 28 (11) ◽  
pp. 1097-1106
Author(s):  
Iván Lombardero ◽  
Mario Ochoa ◽  
Naoya Miyashita ◽  
Yoshitaka Okada ◽  
Carlos Algora

2005 ◽  
Vol 40 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
G. Timò ◽  
C. Flores ◽  
R. Campesato

Author(s):  
Guillaume Courtois ◽  
Rufi Kurstjens ◽  
Jinyoun Cho ◽  
Kristof Dessein ◽  
Ivan Garcia ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.


2019 ◽  
Vol 28 (1) ◽  
pp. 16-24 ◽  
Author(s):  
Kikuo Makita ◽  
Hidenori Mizuno ◽  
Takeshi Tayagaki ◽  
Taketo Aihara ◽  
Ryuji Oshima ◽  
...  

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