Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTiO3 films

2020 ◽  
Vol 116 (10) ◽  
pp. 102101
Author(s):  
Cheuk Ho Chan
Keyword(s):  
Resistive Switching ◽  
Deposition Temperature ◽  
Low Voltage ◽  
Switching Behavior ◽  
Resistive Switching Behavior

Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure

2014 ◽  
Vol 1061-1062 ◽  
pp. 333-336
Author(s):  
Yong Dan Zhu ◽  
Cheng Hu ◽  
An You Zuo
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Switching Behavior ◽  
Good Time ◽  
Charge Redistribution ◽  
Resistive Switching Behavior ◽  
Switching Performance ◽  
Nonvolatile Memories ◽  
Interface Barrier ◽  
Non Destructive

we report reproducible resistive switching performance and relevant physical mechanism of Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

2014 ◽  
Vol 6 (19) ◽  
pp. 16537-16544 ◽  
Author(s):  
Kai-De Liang ◽  
Chi-Hsin Huang ◽  
Chih-Chung Lai ◽  
Jian-Shiou Huang ◽  
Hung-Wei Tsai ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior

Detection of resistive switching behavior based on the Al 2 O 3 /ZnO/Al 2 O 3 structure with alumina buffers

2017 ◽  
Vol 623 ◽  
pp. 8-13 ◽  
Author(s):  
Q. Qiao ◽  
D. Xu ◽  
Y.W. Li ◽  
J.Z. Zhang ◽  
Z.G. Hu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Behavior Based

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

Effect of Oxygen Pressure on the Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films

2013 ◽  
Vol 2 (4) ◽  
pp. P35-P37 ◽  
Author(s):  
T.-G. Seong ◽  
K. Bum Choi ◽  
B. Seok Lee ◽  
B.-Y. Kim ◽  
J.-H. Oh ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Pressure ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Effect Of Oxygen
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