scholarly journals Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films

APL Materials ◽  
2019 ◽  
Vol 7 (10) ◽  
pp. 101114 ◽  
Author(s):  
Yuki K. Wakabayashi ◽  
Takuma Otsuka ◽  
Yoshiharu Krockenberger ◽  
Hiroshi Sawada ◽  
Yoshitaka Taniyasu ◽  
...  
Keyword(s):  
Thin Film ◽  
Machine Learning ◽  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Growth ◽  
Bayesian Optimization

Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 684-686 ◽  
Author(s):  
H. Shibata ◽  
S. Karimoto ◽  
A. Tsukada ◽  
T. Makimoto
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Growth

The Structure of Silicon Thin Films Grown on Sapphire by MBE

1987 ◽  
Vol 107 ◽  
Author(s):  
M. E. Twigg ◽  
J. G. Pellegrino ◽  
E. D. Richmond
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Transmission Electron

AbstractFrom a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.

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