Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes

Norizzawati M. Ghazali; Hiroshi Tomizawa; Noriyuki Hagiwara; Katsuya Suzuki; Abdul M. Hashim; Tomohiro Yamaguchi; Seiji Akita; Koji Ishibashi

doi:10.1063/1.5120816

Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes

AIP Advances ◽

10.1063/1.5120816 ◽

2019 ◽

Vol 9 (10) ◽

pp. 105015 ◽

Cited By ~ 1

Author(s):

Norizzawati M. Ghazali ◽

Hiroshi Tomizawa ◽

Noriyuki Hagiwara ◽

Katsuya Suzuki ◽

Abdul M. Hashim ◽

...

Keyword(s):

Carbon Nanotubes ◽

Single Electron ◽

Single Electron Transistors ◽

Multi Wall Carbon Nanotubes ◽

Tunnel Barriers ◽

Electron Transistors

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Fabrication of single electron transistors in multi-wall carbon nanotubes using Ar beam irradiation

Microelectronic Engineering ◽

10.1016/s0167-9317(03)00135-7 ◽

2003 ◽

Vol 67-68 ◽

pp. 749-754 ◽

Cited By ~ 10

Author(s):

K. Ishibashi ◽

M. Suzuki ◽

D. Tsuya ◽

Y. Aoyagi

Keyword(s):

Carbon Nanotubes ◽

Single Electron ◽

Beam Irradiation ◽

Single Electron Transistors ◽

Multi Wall Carbon Nanotubes ◽

Electron Transistors

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Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2016.7440045 ◽

2016 ◽

Cited By ~ 4

Author(s):

Golnaz Karbasian ◽

Alexei O. Orlov ◽

Alexander S. Mukasyan ◽

Gregory L. Snider

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Single Electron ◽

Single Electron Transistors ◽

Layer Deposition ◽

Tunnel Barriers ◽

Electron Transistors

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Fabrication of single electron transistors using transfer-printed aligned single walled carbon nanotubes arrays

Applied Physics Letters ◽

10.1063/1.3227835 ◽

2009 ◽

Vol 95 (11) ◽

pp. 113107 ◽

Cited By ~ 22

Author(s):

Hiroshi Tabata ◽

Maki Shimizu ◽

Koji Ishibashi

Keyword(s):

Carbon Nanotubes ◽

Single Walled Carbon Nanotubes ◽

Single Electron ◽

Single Electron Transistors ◽

Single Walled Carbon ◽

Walled Carbon Nanotubes ◽

Electron Transistors

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Controlled fabrication of single electron transistors from single-walled carbon nanotubes

Applied Physics Letters ◽

10.1063/1.2955520 ◽

2008 ◽

Vol 92 (26) ◽

pp. 262107 ◽

Cited By ~ 13

Author(s):

Paul Stokes ◽

Saiful I. Khondaker

Keyword(s):

Carbon Nanotubes ◽

Single Walled Carbon Nanotubes ◽

Single Electron ◽

Single Electron Transistors ◽

Single Walled Carbon ◽

Walled Carbon Nanotubes ◽

Electron Transistors

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Novel method for fabrication of nanoscale single-electron transistors: Electron beam induced deposition of Pt and atomic layer deposition of tunnel barriers

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3640752 ◽

2011 ◽

Vol 29 (6) ◽

pp. 06FB01 ◽

Cited By ~ 10

Author(s):

Hubert C. George ◽

Tatyana A. Orlova ◽

Alexei O. Orlov ◽

Gregory L. Snider

Keyword(s):

Electron Beam ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Single Electron ◽

Single Electron Transistors ◽

Layer Deposition ◽

Tunnel Barriers ◽

Novel Method ◽

Electron Beam Induced Deposition ◽

Electron Transistors

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Towards parallel fabrication of single electron transistors using carbon nanotubes

Nanoscale ◽

10.1039/c4nr07540d ◽

2015 ◽

Vol 7 (21) ◽

pp. 9786-9792 ◽

Cited By ~ 5

Author(s):

Muhammad R. Islam ◽

Daeha Joung ◽

Saiful I. Khondaker

Keyword(s):

Carbon Nanotubes ◽

Single Electron ◽

Single Electron Transistors ◽

Electron Transistors

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High-Temperature Operation of Single-Electron Transistors Based on Single-Walled Carbon Nanotubes

Sensors and Materials ◽

10.18494/sam.2009.600 ◽

2009 ◽

pp. 385

Keyword(s):

Carbon Nanotubes ◽

High Temperature ◽

Single Walled Carbon Nanotubes ◽

Single Electron ◽

Single Electron Transistors ◽

Single Walled Carbon ◽

Walled Carbon Nanotubes ◽

High Temperature Operation ◽

Electron Transistors

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Multiwalled carbon nanotubes as single electron transistors

10.1063/1.1420074 ◽

2001 ◽

Author(s):

M. Ahlskog

Keyword(s):

Carbon Nanotubes ◽

Multiwalled Carbon Nanotubes ◽

Single Electron ◽

Multiwalled Carbon ◽

Single Electron Transistors ◽

Electron Transistors

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Ambipolar single electron transistors using side-contacted single-walled carbon nanotubes

Chemical Physics Letters ◽

10.1016/j.cplett.2005.10.071 ◽

2006 ◽

Vol 417 (4-6) ◽

pp. 540-544 ◽

Cited By ~ 11

Author(s):

Kenta Matsuoka ◽

Hiromichi Kataura ◽

Masashi Shiraishi

Keyword(s):

Carbon Nanotubes ◽

Single Walled Carbon Nanotubes ◽

Single Electron ◽

Single Electron Transistors ◽

Single Walled Carbon ◽

Walled Carbon Nanotubes ◽

Electron Transistors

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Platinum single-electron transistors with tunnel barriers made by atomic layer deposition

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3511432 ◽

2010 ◽

Vol 28 (6) ◽

pp. C6L6-C6L8 ◽

Cited By ~ 7

Author(s):

Hubert C. George ◽

Alexei O. Orlov ◽

Gregory L. Snider

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Single Electron ◽

Single Electron Transistors ◽

Layer Deposition ◽

Tunnel Barriers ◽

Electron Transistors

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