Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

2019 ◽  
Vol 115 (14) ◽  
pp. 142104 ◽  
Author(s):  
Michal Bockowski
Keyword(s):  
High Pressure ◽  
Effective Activation ◽  
Ultra High Pressure ◽  
Highly Effective ◽  
P Type

scholarly journals Use of UHPH to Obtain Juices With Better Nutritional Quality and Healthier Wines With Low Levels of SO2

2020 ◽  
Vol 7 ◽  
Author(s):  
Antonio Morata ◽  
Buenaventura Guamis
Keyword(s):  
High Pressure ◽  
Nutritional Quality ◽  
Antimicrobial Effect ◽  
Oxidative Enzymes ◽  
Covalent Bonds ◽  
Ultra High Pressure ◽  
Short Processing Time ◽  
Highly Effective ◽  
Low Levels

Ultra-high pressure homogenization (UHPH) is a high pressure technique in which a fluid is pressurized by pumping at higher than 200 MPa and instantaneously depressurized at atmospheric pressure across a special valve. The full process takes <0.2 s and the in-valve time is <0.02 s. In the valve, extremely intense impacts and shear forces produce the nanofragmentation of biological tissue at a range of 100–300 nm. The antimicrobial effect is highly effective, reaching easily inactivation levels higher than 6-log cycles even at low in-valve temperatures. At in-valve temperatures of 140–150°C (0.02 s) the destruction of thermoresistant spores is possible. Even when the temperature in-valve can be elevated (70–150°C), it can be considered a gentle technology because of the tremendously short processing time. It is easy to get outlet temperatures after valve of 20–25°C by the expansion and assisted by heat exchangers. Thermal markers as hydroxymethylfurfural (HMF) are not formed, nor are deleterious effects observed in sensitive compounds as terpenes or anthocyanins, probably because of the low effect in covalent bonds of small molecules of the high-pressure techniques compared with thermal technologies. Additionally, intense inactivation of oxidative enzymes is observed, therefore protecting the sensory and nutritional quality of fruit juices and avoiding or reducing the use of antioxidants as sulphites. UHPH can be consider a powerful and highly effective continuous and sterilizing technology without thermal repercussions, able to keep fresh juices with most of their initial sensory and nutritional quality and allowing high-quality and natural fermented derivatives as wine.

Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

2021 ◽  
Author(s):  
Kazufumi Hirukawa ◽  
Kensuke Sumida ◽  
Hideki Sakurai ◽  
Hajime FUJIKURA ◽  
Masahiro Horita ◽  
...  
Keyword(s):  
High Pressure ◽  
Isochronal Annealing ◽  
Ultra High Pressure ◽  
Annealing Study ◽  
P Type

scholarly journals High Pressure Processing of Ion Implanted GaN

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1380
Author(s):  
Kacper Sierakowski ◽  
Rafal Jakiela ◽  
Boleslaw Lucznik ◽  
Pawel Kwiatkowski ◽  
Malgorzata Iwinska ◽  
...  
Keyword(s):  
High Pressure ◽  
Atmospheric Pressure ◽  
Semiconductor Device ◽  
High Pressure Processing ◽  
Device Fabrication ◽  
Ultra High Pressure ◽  
Implantation Damage ◽  
Gan Crystal ◽  
P Type ◽  
Post Implantation

It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium.

scholarly journals Trans-lithospheric diapirism explains the presence of ultra-high pressure rocks in the European Variscides

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Petra Maierová ◽  
Karel Schulmann ◽  
Pavla Štípská ◽  
Taras Gerya ◽  
Ondrej Lexa
Keyword(s):  
High Pressure ◽  
Numerical Models ◽  
Classical Concept ◽  
Plate Interface ◽  
Ultra High Pressure ◽  
Common Process ◽  
Mountain Belts ◽  
Collisional Orogens ◽  
Rock Association ◽  
European Variscides

AbstractThe classical concept of collisional orogens suggests that mountain belts form as a crustal wedge between the downgoing and overriding plates. However, this orogenic style is not compatible with the presence of (ultra-)high pressure crustal and mantle rocks far from the plate interface in the Bohemian Massif of Central Europe. Here we use a comparison between geological observations and thermo-mechanical numerical models to explain their formation. We suggest that continental crust was first deeply subducted, then flowed laterally underneath the lithosphere and eventually rose in the form of large partially molten trans-lithospheric diapirs. We further show that trans-lithospheric diapirism produces a specific rock association of (ultra-)high pressure crustal and mantle rocks and ultra-potassic magmas that alternates with the less metamorphosed rocks of the upper plate. Similar rock associations have been described in other convergent zones, both modern and ancient. We speculate that trans-lithospheric diapirism could be a common process.

Observation of Plasma-Induced Damage in Bulk Germanium ${p}$ -Type FinFET Devices and Curing in High-Pressure Anneal

2019 ◽  
Vol 19 (2) ◽  
pp. 468-470
Author(s):  
Gaspard Hiblot ◽  
Hiroaki Arimura ◽  
Liesbeth Witters ◽  
Eddie Chiu ◽  
Yefan Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
P Type
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