Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

Ajay Kumar Visvkarma; Chandan Sharma; Robert Laishram; Sonalee Kapoor; D. S. Rawal; Seema Vinayak; Manoj Saxena

doi:10.1063/1.5116356

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances ◽

10.1063/1.5116356 ◽

2019 ◽

Vol 9 (12) ◽

pp. 125231

Author(s):

Ajay Kumar Visvkarma ◽

Chandan Sharma ◽

Robert Laishram ◽

Sonalee Kapoor ◽

D. S. Rawal ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/6/012 ◽

2006 ◽

Vol 21 (6) ◽

pp. 781-785 ◽

Cited By ~ 7

Author(s):

Dong-Hai Huang ◽

Wei-Chou Hsu ◽

Yu-Shyan Lin ◽

Yue-Huei Wu ◽

Rong-Tay Hsu ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3358 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3358-3363

Author(s):

Jong-Won Lim ◽

Ho-Kyun Ahn ◽

Hong-Gu Ji ◽

Woo-Jin Chang ◽

Jae-Kyoung Mun ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Recessed Gate ◽

Microwave Characteristics

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Comparative Study of Characteristics and Interface States with and without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO 2 Gate Insulator on Si Substrates

physica status solidi (a) ◽

10.1002/pssa.201900981 ◽

2020 ◽

Vol 217 (6) ◽

pp. 1900981

Author(s):

Yaopeng Zhao ◽

Chong Wang ◽

Xuefeng Zheng ◽

Xiaohua Ma ◽

Yunlong He ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

Annealing Treatment ◽

High Electron Mobility Transistors ◽

Gate Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors

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Comparative Study of AlGaN/AlN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Ni/Au Gate Electrode

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ac2783 ◽

2021 ◽

Author(s):

Jing-Shiuan Niu ◽

Li-An Tsai ◽

Wei-Che Shao ◽

Jung-Hui Tsai ◽

Wen-Chau Liu

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Gate Electrode ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

Applied Physics Letters ◽

10.1063/1.1512820 ◽

2002 ◽

Vol 81 (16) ◽

pp. 3073-3075 ◽

Cited By ~ 46

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa ◽

T. Jimbo

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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A comparative study of the noise performance of aluminium-gallium-arsenide/gallium-arsenide high electron mobility transistors with and without superconducting gate electrodes

IEEE Electron Device Letters ◽

10.1109/55.145051 ◽

1992 ◽

Vol 13 (5) ◽

pp. 273-275 ◽

Cited By ~ 1

Author(s):

L.O.A. Myer ◽

M.G. Spencer ◽

J.A. Griffin

Keyword(s):

Gallium Arsenide ◽

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Aluminium Gallium Arsenide ◽

High Electron ◽

Noise Performance ◽

High Electron Mobility ◽

Gate Electrodes ◽

Electron Mobility Transistors

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A comparative study on radiation reliability of composite channel InP high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/abe2fd ◽

2021 ◽

Author(s):

Jia-Jia Zhang ◽

Ping Ding ◽

Ya-Nan Jin ◽

Sheng-Hao Meng ◽

Xiang-Qian Zhao ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

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Comparative Study Between AlGaN/GaN and AlInN/GaN High Electron Mobility Transistors

2018 10th International Conference on Electrical and Computer Engineering (ICECE) ◽

10.1109/icece.2018.8636702 ◽

2018 ◽

Author(s):

Md. Shafiqul Islam ◽

Abdul Ahad ◽

Hasan Ahmed ◽

Sujjatul Islam

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comparative study on noise characteristics of As and Sb-based high electron mobility transistors

physica status solidi (a) ◽

10.1002/pssa.201600599 ◽

2016 ◽

Vol 214 (3) ◽

pp. 1600599

Author(s):

Takuto Takahashi ◽

Shota Hatsushiba ◽

Sachie Fujikawa ◽

Hiroki I. Fujishiro

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Noise Characteristics

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Comparative study of mathematically modelled High Electron Mobility Transistors and silicon nanowire transistors

2011 3rd International Conference on Electronics Computer Technology ◽

10.1109/icectech.2011.5941926 ◽

2011 ◽

Cited By ~ 1

Author(s):

S. Neema Menon ◽

K. A. Narayanankutty

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

Silicon Nanowire ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Nanowire Transistors ◽

Electron Mobility Transistors

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