Asymmetric spin dependent scattering at the interfaces of Si / La 0.7 Sr 0.3 M n O 3 / ZnO heterostructures

2019 ◽  
Vol 115 (22) ◽  
pp. 222401 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Spin Dependent Scattering

Spin-dependent scattering in magnetized Luttinger liquids

2008 ◽  
Vol 40 (5) ◽  
pp. 1736-1738 ◽  
Author(s):  
M.A.N. Araújo ◽  
J. Berakdar ◽  
V.K. Dugaev ◽  
V.R. Vieira
Keyword(s):  
Luttinger Liquids ◽  
Spin Dependent Scattering

scholarly journals MAGNETO-GYROTROPIC PHOTOGALVANIC EFFECTS IN SEMICONDUCTOR QUANTUM WELLS

2008 ◽  
Vol 22 (01n02) ◽  
pp. 115-116 ◽  
Author(s):  
S. D. GANICHEV
Keyword(s):  
Hall Effect ◽  
Electric Current ◽  
Electron Gas ◽  
Spin Hall Effect ◽  
Orbit Coupling ◽  
Relaxation Processes ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Wide Range ◽  
Spin Dependent Scattering

The spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electric current drives a transverse spin current and causes a nonequilibrium spin accumulation near the sample boundary,1,2 the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current3,4 or the reverse process, in which an electrical current generates a non-equilibrium spin-polarization,5–9 are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. Then spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by spin splitting of the band structure (intrinsic spin Hall effect). Recently an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect has been observed.10 In contrast to the spin Hall effect it does not require an electric current to flow: it is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. It is show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium temperature up to room temperature. Moreover the experimental results demonstrate that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of non-equilibrium carriers. In order to demonstrate the existence of the spin separation due to asymmetric scattering the pure spin current was converted into an electric current. It is achieved by application of a magnetic field which polarizes spins. This is analogues to spin-dependent scattering in transport experiments: spin-dependent scattering in an unpolarized electron gas causes the extrinsic spin Hall effect, whereas in a spin-polarized electron gas a charge current, the anomalous Hall effect, can be observed. As both magnetic fields and gyrotropic mechanisms were used authors introduced the notation "magneto-gyrotropic photogalvanic effects" for this class of phenomena. The effect is observed in GaAs and InAs low dimensional structures at free-carrier absorption of terahertz radiation in a wide range of temperatures from liquid helium temperature up to room temperature. The results are well described by the phenomenological description based on the symmetry. Experimental and theoretical analysis evidences unumbiguously that the observed photocurrents are spin-dependent. Microscopic theory of this effect based on asymmetry of photoexcitation and relaxation processes are developed being in a good agreement with experimental data. Note from Publisher: This article contains the abstract only.

scholarly journals Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism

2019 ◽  
Vol 125 (2) ◽  
pp. 023907 ◽  
Author(s):  
Yu. O. Tykhonenko-Polishchuk ◽  
D. M. Polishchuk ◽  
T. I. Polek ◽  
D. D. Yaremkevych ◽  
A. F. Kravets ◽  
...  
Keyword(s):  
Proximity Effect ◽  
Spin Dependent Scattering ◽  
Magnetic Proximity Effect

A QUANTUM MODEL FOR THE GIANT MAGNETORESISTANCE EFFECT

1996 ◽  
Vol 10 (17) ◽  
pp. 2103-2110
Author(s):  
LEI ZHOU ◽  
RUIBAO TAO
Keyword(s):  
Simple Model ◽  
Electric Conductivity ◽  
Giant Magnetoresistance ◽  
Quantum Model ◽  
Magnetoresistance Effect ◽  
Conduction Electrons ◽  
Giant Magnetoresistance Effect ◽  
Model Hamiltonian ◽  
Spin Dependent Scattering ◽  
Scattering Potential

A quantum explanation based on the previous semi-classical theory has been presented for the giant magnetoresistance (GMR) effect in this letter. A simple model Hamiltonian has been proposed for the conduction electrons in the magnetic layered structures in which the interaction of the conduction electrons with the local spins and the spin-dependent scattering potential have been considered, then an analytical expression of the effective electric conductivity is derived after some simplifying procedures. The main feature of the GMR effect may be explained by this simple model qualitatively.

Giant Magnetoresistance in Annealed Fe/Cr Multilayers

1993 ◽  
Vol 313 ◽  
Author(s):  
Noa More Rensing ◽  
Bruce M. Clemens
Keyword(s):  
Giant Magnetoresistance ◽  
Structural Effect ◽  
Magnetic Effect ◽  
Antiferromagnetic Coupling ◽  
X Ray Diffraction ◽  
Magnetoresistance Effect ◽  
X Ray ◽  
Giant Magnetoresistance Effect ◽  
Higher Temperature ◽  
Spin Dependent Scattering

ABSTRACTThe giant magnetoresistance effect in antiferromagnetically coupled Fe/Cr Multilayers has been attributed to spin dependent scattering at the interfaces between the constituents. One possible source of this spin dependent scattering is chromium impurities in the iron layers due to intermixing at the interfaces. Annealing the films can promote the diffusion of the components, increasing the impurity concentration and therefore the Magnetoresistance. For this study Fe/Cr Multilayers were annealed at several temperatures and for several durations. Annealing at moderate temperatures (∼ 350°C) increases the Magnetoresistance, while higher temperature anneals (∼ 600°C) cause the magnetoresistance to disappear completely. Long anneals at 330°C (> 100 hours) also reduce the Magnetoresistance. VSM Measurements indicate that the antiferromagnetic coupling is reduced in the annealed samples but show no evidence of Magnetically “dead” alloy layers. Low angle X-ray diffraction indicates that the structural effect of annealing is very subtle in comparison to the significant magnetic effect.

Spin-dependent scattering in nanocrystalline Fe:GMR

2002 ◽  
Vol 322 (3-4) ◽  
pp. 318-322 ◽  
Author(s):  
A Hernando ◽  
F Briones ◽  
A Cebollada ◽  
P Crespo
Keyword(s):  
Spin Dependent Scattering

Systematic Pseudomagnetic Measurements of the Spin-Dependent Scattering Length of Slow Neutrons with Atomic Nuclei

1974 ◽  
Vol 33 (2) ◽  
pp. 102-104 ◽  
Author(s):  
P. Roubeau ◽  
A. Abragam ◽  
G. L. Bacchella ◽  
H. Glättli ◽  
A. Malinovski ◽  
...  
Keyword(s):  
Scattering Length ◽  
Atomic Nuclei ◽  
Spin Dependent Scattering ◽  
Slow Neutrons
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