Improved optoelectronic properties in solution-processed epitaxial rare-earth-doped BaSnO3 thin films via grain size engineering

2019 ◽  
Vol 115 (16) ◽  
pp. 162105
Author(s):  
R. H. Wei ◽  
L. Hu ◽  
C. Shao ◽  
X. W. Tang ◽  
X. Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rare Earth ◽  
Optoelectronic Properties ◽  
Solution Processed ◽  
Rare Earth Doped

Preferential Orientation of Photochromic Gadolinium Oxyhydrides

2020 ◽  
Author(s):  
Elbruz Murat Baba ◽  
Jose Montero ◽  
Dmitrii Moldarev ◽  
Marcos V. Moro ◽  
Max Wolff ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rare Earth ◽  
Preferential Orientation ◽  
Reactive Magnetron ◽  
Flow Ratio ◽  
Deposition Pressure ◽  
Step Process ◽  
Oxidation In Air ◽  
Key Parameter

<p>We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH<sub>2-x</sub>) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations, and photochromic response of the films are strongly dependent on the deposition pressure. GdHO films show preferential orientation along the [100] direction and exhibit photochromism when synthesized at deposition pressures up to 5.8 Pa and. The photochromic contrast is larger than 20 % when the films are deposited below 2.8 Pa with 0.22 H<sub>2</sub>/Ar flow ratio. We argue that the degree of preferential orientation defines the oxygen concentration which is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above are explained by the oxidation-induced decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas. </p>

scholarly journals High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Rare Earth ◽  
Ionic Conductivity ◽  
Bulk Material ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

2016 ◽  
Vol 8 (45) ◽  
pp. 31128-31135 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Qi-Jun Sun ◽  
Ye Zhou ◽  
Su-Ting Han ◽  
Li Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Gate Dielectric ◽  
Rare Earth Oxide ◽  
Oxide Thin Films ◽  
Solution Processed

scholarly journals Coherent magnon and acoustic phonon dynamics in tetragonal and rare-earth-doped BiFeO3multiferroic thin films

2013 ◽  
Vol 88 (9) ◽  
Author(s):  
K. I. Doig ◽  
F. Aguesse ◽  
A. K. Axelsson ◽  
N. M. Alford ◽  
S. Nawaz ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Acoustic Phonon ◽  
Phonon Dynamics ◽  
Rare Earth Doped

Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics

1996 ◽  
Vol 25 (5) ◽  
pp. 709-713 ◽  
Author(s):  
B. J. H. Stadler ◽  
K. Vaccaro ◽  
A. Davis ◽  
G. O. Ramseyer ◽  
E. A. Martin ◽  
...  
Keyword(s):  
Rare Earth ◽  
Transition Metal ◽  
Optoelectronic Properties ◽  
Epitaxial Layers ◽  
Rare Earth Doped

Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films

2014 ◽  
Vol 117 (1) ◽  
pp. 197-205 ◽  
Author(s):  
O. G. Pompilian ◽  
G. Dascalu ◽  
I. Mihaila ◽  
S. Gurlui ◽  
M. Olivier ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Pulsed Laser Deposition ◽  
Chalcogenide Glass ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gallium Lanthanum Sulphide ◽  
Rare Earth Doped

Rare earth-doped TiO2 nanocrystalline thin films: Preparation and thermal stability

2014 ◽  
Vol 34 (16) ◽  
pp. 4457-4462 ◽  
Author(s):  
Mario Borlaf ◽  
María T. Colomer ◽  
Rodrigo Moreno ◽  
Angel L. Ortiz
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Rare Earth ◽  
Doped Tio2 ◽  
Rare Earth Doped ◽  
Nanocrystalline Thin Films

Annealing Characteristics of Al-Light-Rare-Earth Alloy Thin Films for Microelectronic Conductor Lines

1995 ◽  
Vol 403 ◽  
Author(s):  
Shinji Takayama ◽  
Naganori Tsutsui
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rare Earth ◽  
Grain Boundaries ◽  
High Temperatures ◽  
Light Rare Earth ◽  
Rare Earth Alloy ◽  
Metallic Compounds ◽  
Al Matrix

AbstractThe addition of La and Pr to Al thin films markedly decreases the grain size of the Al matrix and largely suppresses growth of thermal defects of hillocks and whiskers at high temperatures (350°C – 450°C). A large number of fine metallic compounds of Al11RE3 and/or Al3RE (RE = La and Pr) were segregated in an Al matrix, mostly at grain boundaries, after annealing at 350°C. The resistivities of the films after annealing at the above temperatures show very low values of less than 6 μωcm, without the salient formation of hillocks or whiskers on the film surfaces.

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