scholarly journals Dysprosium substituted Ce:YIG thin films with perpendicular magnetic anisotropy for silicon integrated optical isolator applications

APL Materials ◽  
2019 ◽  
Vol 7 (8) ◽  
pp. 081119 ◽  
Author(s):  
Yan Zhang ◽  
Qingyang Du ◽  
Chuangtang Wang ◽  
Wei Yan ◽  
Longjiang Deng ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Isolator ◽  
Integrated Optical

scholarly journals Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025106
Author(s):  
Xinjun Wang ◽  
Sergiy Krylyuk ◽  
Daniel Josell ◽  
Delin Zhang ◽  
Deyuan Lyu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Perpendicular Magnetic Anisotropy

scholarly journals The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetic Anisotropy ◽  
High Stability ◽  
Essential Role ◽  
Perpendicular Magnetic Anisotropy ◽  
Low Energy ◽  
High Resistivity ◽  
Excellent Thermal Stability ◽  
Low Energy Consumption

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

Epitaxial PtFe and PtCo(001) thin films with perpendicular magnetic anisotropy

1993 ◽  
Vol 126 (1-3) ◽  
pp. 577-579 ◽  
Author(s):  
B.M. Lairson ◽  
M.R. Visokay ◽  
R. Sinclair ◽  
B.M. Clemens
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy

Magnetocrystalline origin of the perpendicular magnetic anisotropy in Ga-poor FeGa thin films

2021 ◽  
pp. 168047
Author(s):  
G.A. Ramírez ◽  
A. Moya-Riffo ◽  
D. Goijman ◽  
J.E. Gómez ◽  
F. Malamud ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy

scholarly journals Origin of perpendicular magnetic anisotropy in amorphous thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Lordan ◽  
Guannan Wei ◽  
Paul McCloskey ◽  
Cian O’Mathuna ◽  
Ansar Masood
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Functional Materials ◽  
Spin Reorientation ◽  
Amorphous Films ◽  
Amorphous Thin Films ◽  
Magnetic Performance ◽  
Out Of Plane ◽  
Sputtering Pressure

AbstractThe emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.

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