scholarly journals Thermal annealing induced structural, optical and electrical properties change in As40Se60-xBix chalcogenide thin films

AIP Advances ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 095065 ◽  
Author(s):  
Mukta Behera ◽  
N. C. Mishra ◽  
Ramakanta Naik ◽  
C. Sripan ◽  
R. Ganesan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Optical And Electrical Properties ◽  
Chalcogenide Thin Films

Optical and electrical properties of Sn-Sb-Se chalcogenide thin films

2008 ◽  
Vol 43 (1) ◽  
pp. 23-30 ◽  
Author(s):  
M. M. Wakkad ◽  
E. Kh. Shokr ◽  
H. A. Abd El Ghani ◽  
M. A. Awad
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Chalcogenide Thin Films

Effect of thermal annealing on structural, optical and electrical properties of transparent Nb2O5 thin films

2017 ◽  
Vol 13 ◽  
pp. 112-118 ◽  
Author(s):  
A.A. Atta ◽  
M.M. El-Nahass ◽  
A.M. Hassanien ◽  
Khaled M. Elsabawy ◽  
M.M. Abd El-Raheem ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Optical And Electrical Properties

Influence of Rapid Thermal Annealing on Structural, Optical and Electrical Properties of ITO Thin Films

2016 ◽  
Vol 675-676 ◽  
pp. 249-252
Author(s):  
Wissawat Sakulsaknimitr ◽  
Worasitti Sriboon ◽  
Kanyakorn Teanchai ◽  
Mati Horprathum ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hall Effect Measurement ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Thin Films

Indium doped tin oxide (ITO) thin films were deposited on silicon wafer (100) and glass slide by ion assisted electron beam evaporation deposition. After deposition, the ITO thin films were annealed in vacuum (100-300°C) and their structural, optical and electrical properties were systematically investigated. X-ray diffraction,atomic force microscopy, ultraviolet–visible (UV–vis) spectrophotometer and hall-effect measurement were employed to obtain information on the crystallization, transmission and resistivity the films.It was found that the rapid thermal annealing can improve the resistivity of ITO thin films which specializes for the transparent conductive layers.

Optical and electrical properties of solution processable TiOx thin films for solar cell and sensor applications

2011 ◽  
Vol 1352 ◽  
Author(s):  
Jiguang Li ◽  
Lin Pu ◽  
Mool C. Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Refractive Index ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Electrical Resistance ◽  
Optical And Electrical Properties

ABSTRACTRecently, few tens of nanometer thin films of TiOx have been intensively studied in applications for organic solar cells as optical spacers, environmental protection and hole blocking. In this paper we provide initial measurements of optical and electrical properties of TiOx thin films and it’s applications in solar cell and sensor devices. The TiOx material was made through hydrolysis of the precursor synthesized from titanium isopropoxide, 2-methoxyethanol, and ethanolamine. The TiOx thin films of thickness between 20 nm to 120 nm were obtained by spin coating process. The refractive index of TiOx thin films were measured using an ellipsometric technique and an optical reflection method. At room temperature, the refractive index of TiOx thin film was found to be 1.77 at a wavelength of 600 nm. The variation of refractive index under various thermal annealing conditions was also studied. The increase in refractive index with high temperature thermal annealing process was observed, allowing the opportunity to obtain refractive index values between 1.77 and 2.57 at a wavelength 600 nm. The refractive index variation is due to the TiOx phase and density changes under thermal annealing.The electrical resistance was measured by depositing a thin film of TiOx between ITO and Al electrode. The electrical resistivity of TiOx thin film was found to be 1.7×107 Ω.cm as measured by vertical transmission line method. We have also studied the variation of electrical resistivity with temperature. The temperature coefficient of electrical resistance for 60 nm TiOx thin film was demonstrated as - 6×10-3/°C. A linear temperature dependence of resistivity between the temperature values of 20 – 100 °C was observed.The TiOx thin films have been demonstrated as a low cost solution processable antireflection layer for Si solar cells. The results indicate that the TiOx layer can reduce the surface reflection of the silicon as low as commonly used vacuum deposited Si3N4 thin films.

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